H
Hui Zhao
Researcher at University of Minnesota
Publications - 26
Citations - 1307
Hui Zhao is an academic researcher from University of Minnesota. The author has contributed to research in topics: Tunnel magnetoresistance & Spin-transfer torque. The author has an hindex of 15, co-authored 26 publications receiving 1207 citations. Previous affiliations of Hui Zhao include Fudan University & Zhengzhou Institute of Aeronautical Industry Management.
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Journal ArticleDOI
A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory
TL;DR: The studies based on the proposed scaling methodology show that in-plane STT-MRAM will outperform SRAM from 15 nm node, while its perpendicular counterpart requires further innovations in MTJ material in order to overcome the poor write performance scaling from 22 nm node onwards.
Journal ArticleDOI
Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions
P. Khalili Amiri,Zhongming Zeng,Jürgen Langer,Hui Zhao,Graham E. Rowlands,Y.-J. Chen,Ilya Krivorotov,Jian-Ping Wang,Hong-Wen Jiang,Jordan A. Katine,Yiming Huai,Kosmas Galatsis,Kang L. Wang +12 more
TL;DR: In this article, in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current were presented.
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High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy.
Zhongming Zeng,Pedram Khalili Amiri,Ilya Krivorotov,Hui Zhao,Giovanni Finocchio,Jian-Ping Wang,Jordan A. Katine,Yiming Huai,Juergen Langer,O Kosmas Galatsis,Kang L. Wang,Hong-Wen Jiang +11 more
TL;DR: It is demonstrated that microwave signals with maximum measured power of 0.28 μW and simultaneously narrow line width of 25 MHz can be generated from CoFeB-MgO-based magnetic tunnel junctions having an in-plane magnetized reference layer and a free layer with strong perpendicular anisotropy.
Journal ArticleDOI
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
Hui Zhao,Andrew Lyle,Yisong Zhang,Pedram Khalili Amiri,Graham E. Rowlands,Zhongming Zeng,Jordan A. Katine,Hong-Wen Jiang,Kosmas Galatsis,Kang L. Wang,Ilya Krivorotov,Jian-Ping Wang +11 more
TL;DR: In this article, the authors investigated in-plane MgO-based magnetic tunnel junctions (MTJ) for the application of spin torque transfer random access memory (STT-RAM).
Journal ArticleDOI
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
Graham E. Rowlands,Talat S. Rahman,Jordan A. Katine,Jürgen Langer,Andrew Lyle,Hui Zhao,Juan G. Alzate,Alexey A. Kovalev,Yaroslav Tserkovnyak,Zhongming Zeng,Hong-Wen Jiang,Kosmas Galatsis,Yiming Huai,P. Khalili Amiri,Kang L. Wang,Ilya Krivorotov,Jian-Ping Wang +16 more
TL;DR: In this article, a spin torque memory element with an in-plane free layer and a perpendicular polarizer was proposed to increase the write speed and decrease the write energy of the element.