Gyeongtak Han

TL;DR: A self-selective memory design able to combine, in the same cell, non-volatile and volatile behaviors with negligible sneak current is proposed, thereby achieving a practical readout margin for terabit-scale and energy-efficient memory integration.

TL;DR: An approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu–Si alloy formation using direct chemical vapour deposition is proposed.

TL;DR: It is demonstrated that heterointerface control is one of keys to achieving high device performance by constructing WSe2/SnSe2 heterostructures in inert gas environments and that diode behavior can be further modulated by controlling the electrostatic doping and the tunneling barrier as well.

TL;DR: In this article, the authors proposed an effective approach to alleviate the volume pulverization and enhance the capacity of SIB anodes by anchoring SnS nanoparticles densely on a porous carbon nanotube (CNT) film (SnS@CNT).

TL;DR: In this paper, a threshold switching device based on a vertical heterojunction of silver/hexagonal boron nitride (h-BN)/graphene was proposed.