Journal ArticleDOI
Layer-controlled single-crystalline graphene film with stacking order via Cu–Si alloy formation
Van Luan Nguyen,Dinh Loc Duong,Sanghyub Lee,José Avila,Gyeongtak Han,Young-Min Kim,Maria C. Asensio,Se-Young Jeong,Young Hee Lee +8 more
TLDR
An approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu–Si alloy formation using direct chemical vapour deposition is proposed.Abstract:
Multilayer graphene and its stacking order provide both fundamentally intriguing properties and technological engineering applications. Several approaches to control the stacking order have been demonstrated, but a method of precisely controlling the number of layers with desired stacking sequences is still lacking. Here, we propose an approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu-Si alloy formation using direct chemical vapour deposition. C atoms are introduced by tuning the ultra-low-limit CH4 concentration to form a SiC layer, reaching one to four graphene layers at the wafer scale after Si sublimation. The crystallographic structure of single-crystalline or uniformly oriented bilayer (AB), trilayer (ABA) and tetralayer (ABCA) graphene are determined via nano-angle-resolved photoemission spectroscopy, which agrees with theoretical calculations, Raman spectroscopy and transport measurements. The present study takes a step towards the layer-controlled growth of graphite and other two-dimensional materials.read more
Citations
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Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe 2
Xiaolong Xu,Yu Pan,Shuai Liu,Bo Han,Pingfan Gu,Siheng Li,Wanjin Xu,Yuxuan Peng,Zheng Han,Ji Chen,Peng Gao,Yu Ye +11 more
TL;DR: In this article, a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe2) semiconductors on an amorphous insulating substrate was reported.
Journal ArticleDOI
Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis.
TL;DR: Wang et al. as discussed by the authors presented a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSc graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis.
Journal ArticleDOI
Memristive Crossbar Arrays for Storage and Computing Applications
Huihan Li,Shaocong Wang,Xumeng Zhang,Wei Wang,Rui Yang,Zhong Sun,Wanxiang Feng,Peng Lin,Zhongrui Wang,Linfeng Sun,Yugui Yao +10 more
TL;DR: Crossbar architecture is introduced, the origin of sneak‐path current is reviewed, techniques to mitigate this issue from the angle of materials and circuits are discussed, and the applications of memristive crossbars in both machine learning and neuromorphic computing are surveyed.
Journal ArticleDOI
Large-scale synthesis of graphene and other 2D materials towards industrialization
TL;DR: The industrial application of two-dimensional (2D) materials strongly depends on the large-scale manufacturing of high-quality 2D films and powders as mentioned in this paper , and three state-of-the-art mass production techniques, their limitations, and opportunities for future improvement are discussed.
Journal Article
High-temperature surface superconductivity in rhombohedral graphite
TL;DR: For weak pairing interaction, the flat band character of surface superconductivity transforms into a BCS-like relation with high critical temperature characterized by a higher coupling constant due to a much larger density of states than in the bulk as mentioned in this paper.
References
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Journal ArticleDOI
Fine Structure Constant Defines Visual Transparency of Graphene
Rahul R. Nair,Peter Blake,Peter Blake,Alexander N. Grigorenko,K. S. Novoselov,Timothy J. Booth,Timothy J. Booth,Tobias Stauber,Tobias Stauber,Nuno M. R. Peres,Nuno M. R. Peres,A. K. Geim +11 more
TL;DR: It is shown that the opacity of suspended graphene is defined solely by the fine structure constant, a = e2/hc � 1/137 (where c is the speed of light), the parameter that describes coupling between light and relativistic electrons and that is traditionally associated with quantum electrodynamics rather than materials science.
Journal ArticleDOI
Graphene photonics and optoelectronics
TL;DR: Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability as discussed by the authors, and its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability.
Journal ArticleDOI
Unconventional superconductivity in magic-angle graphene superlattices
Yuan Cao,Valla Fatemi,Shiang Fang,Kenji Watanabe,Takashi Taniguchi,Efthimios Kaxiras,Pablo Jarillo-Herrero +6 more
TL;DR: The realization of intrinsic unconventional superconductivity is reported—which cannot be explained by weak electron–phonon interactions—in a two-dimensional superlattice created by stacking two sheets of graphene that are twisted relative to each other by a small angle.
Journal ArticleDOI
Epitaxial graphene on ruthenium
TL;DR: It is shown that epitaxy on Ru(0001) produces arrays of macroscopic single-crystalline graphene domains in a controlled, layer-by-layer fashion, and demonstrates a route towards rational graphene synthesis on transition-metal templates for applications in electronics, sensing or catalysis.
Journal ArticleDOI
Doping graphene with metal contacts.
Gianluca Giovannetti,Gianluca Giovannetti,Petr Khomyakov,Geert Brocks,Volodymyr Karpan,J.E. van den Brink,J.E. van den Brink,Paul J. Kelly +7 more
TL;DR: In this article, the authors use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au, and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by 0:5 eV.