H
Hei Kam
Researcher at Intel
Publications - 2
Citations - 576
Hei Kam is an academic researcher from Intel. The author has contributed to research in topics: Electronic circuit & Field-effect transistor. The author has an hindex of 2, co-authored 2 publications receiving 496 citations.
Papers
More filters
Proceedings ArticleDOI
A 14nm logic technology featuring 2 nd -generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm 2 SRAM cell size
Sanjay Natarajan,M. Agostinelli,S. Akbar,M. Bost,A. Bowonder,V. Chikarmane,S. Chouksey,A. Dasgupta,K. Fischer,Q. Fu,Tahir Ghani,M. Giles,S. Govindaraju,R. Grover,W. Han,D. Hanken,E. Haralson,M. Haran,M. Heckscher,R. Heussner,Pulkit Jain,R. James,R. Jhaveri,I. Jin,Hei Kam,Eric Karl,C. Kenyon,Mark Y. Liu,Y. Luo,R. Mehandru,S. Morarka,L. Neiberg,Paul A. Packan,A. Paliwal,C. Parker,P. Patel,R. Patel,C. Pelto,L. Pipes,P. Plekhanov,M. Prince,S. Rajamani,J. Sandford,Sell Bernhard,Swaminathan Sivakumar,Pete Smith,B. Song,K. Tone,T. Troeger,J. Wiedemer,M. Yang,Kevin Zhang +51 more
TL;DR: In this paper, a 14nm logic technology using 2nd-generation FinFET transistors with a novel subfin doping technique, self-aligned double patterning (SADP) for critical patterning layers, and air-gapped interconnects at performance-critical layers is described.
MOSFET Replacement Devices for Energy-Efficient Digital Integrated Circuits
TL;DR: In this article, the pull-in effect of an electrostatically actuated beam to achieve abrupt switching behavior in the nanoelectro-mechanical field effect transistor (NEMFET) was investigated.