Heinz Siegwart

TL;DR: P polarization-dependent X-ray magnetic dichroism spectro-microscopy is presented that reveals the micromagnetic structure on both sides of a ferromagnetic–antiferromagnetic interface, implying that the alignment of the ferrom magnetic spins is determined, domain by domain, by the spin directions in the underlying antiferromagnet layer.

TL;DR: These studies open the door for a microscopic understanding of the magnetic coupling across antiferromagnetic-ferromagnetic interfaces.

TL;DR: In this article, the authors demonstrate that the compound SrHfO3 grown epitaxially on Si(100) by molecular-beam epitaxy is a potential gate dielectric to fabricate n- and p-metaloxide semiconductor field effect transistors with equivalent oxide thickness (EOT) below 1nm.

TL;DR: Electro-optic switching and modulation from room temperature down to 4 K is demonstrated by using the Pockels effect in integrated barium titanate (BaTiO3) devices, removing major roadblocks for the realization of cryogenic-compatible systems in the field of quantum computing, supercomputing and sensing.

TL;DR: In this article, perovskite thin films of SrHfO3 were grown by molecular beam epitaxy and compared with SrTiO3 films using spectroscopic ellipsometry and analyzed with respect to their structural properties characterized by x-ray diffractometry, atomic force microscopy, and transmission electron microscopy.