Ho-Jung Kim

TL;DR: It is demonstrated that the threshold switching device based on As-Ge-Te-Si material significantly improves cycling endurance performance by reactive nitrogen deposition and nitrogen plasma hardening and reduces tellurium diffusion during cycling.

TL;DR: In this paper, a novel hybrid complementary metal oxide semiconductor (CMOS) image sensor architecture utilizing nanometer scale amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFT) combined with a conventional Si photo diode was proposed.

TL;DR: A novel hybrid CIS architecture based on the combination of nanometer-scale amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and a conventional Si photo diode (PD) is proposed that aims to overcome the loss of quantum efficiency and image quality due to the continuous miniaturization of PDs.

TL;DR: In this article, a switch device made of a nitridized-chalcogenide glass for application in nanoscale array circuits was presented, which was shown to be able to scale down to 30 nm with an on current of 100 μA.

TL;DR: In this paper, a nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the switch and a second threshold voltage for reverse current when a reverse current was applied on the switch.