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Ho Won Jang

Researcher at Seoul National University

Publications -  594
Citations -  22435

Ho Won Jang is an academic researcher from Seoul National University. The author has contributed to research in topics: Chemistry & Thin film. The author has an hindex of 64, co-authored 493 publications receiving 15645 citations. Previous affiliations of Ho Won Jang include Korea Institute of Science and Technology & Wisconsin Alumni Research Foundation.

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Boosting interfacial charge transfer for efficient water-splitting photoelectrodes: progress in bismuth vanadate photoanodes using various strategies

TL;DR: In this paper, the authors highlight the important strategies that have been made for improving the performance of the photoanode material, such as fabricating nanostructured electrode, controlling reacting facet, stacking with other materials, utilizing plasmonics, loading co-catalyst, and controlling the interfacial band bending with ferroelectrics.
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Stabilization of NiFe Layered Double Hydroxides on n-Si by an Activated TiO2 Interlayer for Efficient Solar Water Oxidation

TL;DR: NiFe layered double hydroxides (LDH) on n-Si can be an expectable photoanode because of its advantages of earth-abundant materials, high photoelectrochemical properties, and wide solar spectrum as mentioned in this paper.
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Effect of lead thiocyanate ions on performance of tin-based perovskite solar cells

TL;DR: In this article, 11 different perovskite precursors are synthesized by increasing the amount of Pb(SCN)2 from 0 to 0.5 m in CH(NH2)2SnI3.
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Role of TiCN addition on the characteristics of reactive spark plasma sintered ZrB2-based novel composites

TL;DR: In this paper, the effect of TiCN on the microstructure development of spark plasma sintered fully dense ZrB2-based ceramics was investigated, and the Vickers hardness and elastic modulus of the (Zr,Ti)B2 matrix in the ternary system were measured to be 29.3 and 450.8 GPa, respectively.
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Microstructural study of Pt contact on p-type GaN

TL;DR: In this paper, the biaxial tensile strain at the interface of the Pt layer (100 A) with p-type GaN was investigated as a function of annealing temperature.