H
Ho Won Jang
Researcher at Seoul National University
Publications - 594
Citations - 22435
Ho Won Jang is an academic researcher from Seoul National University. The author has contributed to research in topics: Chemistry & Thin film. The author has an hindex of 64, co-authored 493 publications receiving 15645 citations. Previous affiliations of Ho Won Jang include Korea Institute of Science and Technology & Wisconsin Alumni Research Foundation.
Papers
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Band gap engineering of graphene oxide for ultrasensitive NO2 gas sensing
TL;DR: In this article, a graphene oxide (GO) based nitrogen dioxide (NO2) gas sensor with extremely low limit of detection (LOD), which is far below the WHO and EU annual standards, is presented.
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Nanogap-controlled Pd coating for hydrogen sensitive switches and hydrogen sensors
Young Seok Shim,Young Seok Shim,Young Seok Shim,Byungjin Jang,Jun Min Suh,Myoung Sub Noh,Myoung Sub Noh,Sangtae Kim,Soo Deok Han,Soo Deok Han,Young Geun Song,Do Hong Kim,Chong Yun Kang,Chong Yun Kang,Ho Won Jang,Wooyoung Lee +15 more
TL;DR: In this article, a simple and facile method for producing high-performance hydrogen (H 2 ) sensors based on vertically ordered metal-oxide nanorods with a Pd films on a 4-inch SiO 2 /Si substrate by a glancing-angle deposition was presented.
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Incorporation of Oxygen Donors in AlGaN
TL;DR: The chemistry of oxygen atoms at the surface of an AlGaN layer for Al 0.35 Ga 0.65 N/GaN heterostructures was investigated by scanning photoemission microscopy (SPEM) using synchrotron radiation.
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Dendritic gold-supported iridium/iridium oxide ultra-low loading electrodes for high-performance proton exchange membrane water electrolyzer
Hyunki Kim,Junhyeong Kim,Jooyoung Kim,Gyeong Ho Han,Wenwu Guo,Seokjin Hong,Hyun S. Park,Ho Won Jang,Soo Young Kim,Sang Hyun Ahn +9 more
TL;DR: In this article, the microgram-scale loading of Ir on a highly roughened dendritic Au support is controlled by the number of Ir deposition pulses and, together with Ir coverage, which significantly affect the Ir electronic structure and intrinsic OER activity.
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Low-resistant and high-transparent Ru/Ni ohmic contact on p-type GaN
TL;DR: In this paper, a low-resistant and high-transparent Ru-based ohmic contact on p-type GaN through oxidation annealing under O2 atmosphere was reported.