H
Hsing-Jen Wann
Researcher at IBM
Publications - 22
Citations - 1313
Hsing-Jen Wann is an academic researcher from IBM. The author has contributed to research in topics: Semiconductor device & Gate oxide. The author has an hindex of 12, co-authored 22 publications receiving 1278 citations.
Papers
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Journal ArticleDOI
CMOS scaling into the nanometer regime
Yuan Taur,Douglas A. Buchanan,Wei Chen,David J. Frank,Khalid EzzEldin Ismail,Shih-Hsien Lo,George Anthony Sai-Halasz,R. Viswanathan,Hsing-Jen Wann,Shalom J. Wind,Hon-Sum Philip Wong +10 more
TL;DR: In this article, the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations are discussed, including power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays.
Patent
Forming steep lateral doping distribution at source/drain junctions
TL;DR: A semiconductor device is fabricated by implanting into a semiconductor substrate non-doping ions at a tilt angle of at least about 10° to laterally extend preamorphization of the substrate portion as mentioned in this paper.
Patent
Logic circuits having linear and cellular gate transistors
TL;DR: In this article, a logic circuit is provided with a first inverter having a plurality of linear gate transistors driving a first capacitive load and a second inverter with a multiplicity of cellular gate transistor driving a second capacitance load.
Patent
Patterned buried insulator
TL;DR: In this article, a patterned buried insulator is formed by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area.
Patent
Recessed-gate MOSFET with out-diffused source/drain extension
TL;DR: In this article, a recessed channel/gate MOSFET structure is proposed, where a semiconductor wafer has a plurality of shallow trench isolation regions embedded therein, where the source and drain regions have an extension which wraps around said oxide spacers and provides a connection with a channel region which is formed below said gate oxide region.