S
Shih-Hsien Lo
Researcher at IBM
Publications - 4
Citations - 1877
Shih-Hsien Lo is an academic researcher from IBM. The author has contributed to research in topics: Threshold voltage & MOSFET. The author has an hindex of 4, co-authored 4 publications receiving 1828 citations.
Papers
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Journal ArticleDOI
CMOS scaling into the nanometer regime
Yuan Taur,Douglas A. Buchanan,Wei Chen,David J. Frank,Khalid EzzEldin Ismail,Shih-Hsien Lo,George Anthony Sai-Halasz,R. Viswanathan,Hsing-Jen Wann,Shalom J. Wind,Hon-Sum Philip Wong +10 more
TL;DR: In this article, the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations are discussed, including power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays.
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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
TL;DR: In this article, an accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitanceversus-voltage curves to quantum-mechanically simulated capacitance-versusvoltage results.
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Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
TL;DR: A quantum-mechanical model was developed to help understand finite inversion layer width, threshold voltage shift, and polysilicon gate depletion effects and it allows a consistent determination of the physical oxide thickness based on an excellent agreement between the measured and modeled C-V curves.
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On–Off Charge–Voltage Characteristics and Dopant Number Fluctuation Effects in Junctionless Double-Gate MOSFETs
TL;DR: In this article, the on-off characteristics of junctionless double-gate MOSFETs were analyzed by analyzing the mobile charge density as a function of the gate voltage.