H
Hussein I. Hanafi
Researcher at IBM
Publications - 82
Citations - 4628
Hussein I. Hanafi is an academic researcher from IBM. The author has contributed to research in topics: Field-effect transistor & MOSFET. The author has an hindex of 29, co-authored 82 publications receiving 4601 citations.
Papers
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Journal ArticleDOI
A silicon nanocrystals based memory
Sandip Tiwari,Farhan Rana,Hussein I. Hanafi,Allan M. Hartstein,Emmanuel F. Crabbé,Kevin K. Chan +5 more
TL;DR: In this paper, a new memory structure using threshold shifting from charge stored in nanocrystals of silicon (≊5nm in size) was described, which utilizes direct tunneling and storage of electrons in the nanocrystal.
Journal ArticleDOI
Fast and long retention-time nano-crystal memory
TL;DR: In this article, a threshold-shifting, single transistor memory structure with fast read and write times and long retention time is described, which consists of a silicon field effect transistor with nano-crystals of germanium or silicon placed in the gate oxide in close proximity of the inversion surface.
Journal ArticleDOI
Single charge and confinement effects in nano-crystal memories
TL;DR: In this paper, the authors confirm the strength of confinement effects and discuss the underlying considerations in the operation of the memory that are related to the reduced volume, strength of the barrier, and random distribution of the trapped charge in nano-crystals.
Proceedings ArticleDOI
Volatile and non-volatile memories in silicon with nano-crystal storage
TL;DR: In this article, a single transistor memory structure with changes in threshold voltage exceeding /spl ap/0.25 V corresponding to single electron storage in individual nano-crystals, operating in the sub-3 V range, and exhibiting long term to nonvolatile charge storage is reported.
Proceedings ArticleDOI
High-performance symmetric-gate and CMOS-compatible V/sub t/ asymmetric-gate FinFET devices
J. Kedzierski,David M. Fried,Edward J. Nowak,Thomas S. Kanarsky,Jed H. Rankin,Hussein I. Hanafi,Wesley C. Natzle,Diane C. Boyd,Ying Zhang,Ronnen Andrew Roy,J. Newbury,Chienfan Yu,Qingyun Yang,P. Saunders,C.P. Willets,A.P. Johnson,S.P. Cole,H.E. Young,N. Carpenter,D. Rakowski,Beth Ann Rainey,Peter E. Cottrell,Meikei Ieong,Hon-Sum P. Wong +23 more
TL;DR: In this article, double-gate FinFET devices with asymmetric and symmetric polysilicon gates have been fabricated and shown to have drain currents competitive with fully optimized bulk silicon technologies.