H
Hyung-Seok Lee
Researcher at Massachusetts Institute of Technology
Publications - 50
Citations - 1008
Hyung-Seok Lee is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Bipolar junction transistor & Ohmic contact. The author has an hindex of 15, co-authored 50 publications receiving 912 citations. Previous affiliations of Hyung-Seok Lee include Royal Institute of Technology.
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Journal ArticleDOI
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
Yuhao Zhang,Min Sun,Zhihong Liu,Daniel Piedra,Hyung-Seok Lee,Feng Gao,Tatsuya Fujishima,Tomas Palacios +7 more
TL;DR: In this article, the authors present self-consistent electrothermal simulations of single-finger and multifinger GaN vertical metal-oxide-semiconductor field effect transistors (MOSFETs) and lateral AlGaN/GaN high-electron-mobility transistors and compare their thermal performance.
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AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology
TL;DR: In this paper, undoped AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with a Si-CMOS-compatible technology based on Ti/Al/W ohmic and Schottky contacts are reported.
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3000-V 4.3- $\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier
TL;DR: In this paper, the authors reported the fabrication of InAlN/GaN high-electron mobility transistors (HEMTs) with a three-terminal off-state breakdown voltage (BV) of 3000 V and a low specific on-resistance of 4.25 mΩ·cm2.
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Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit
William E. Hoke,R. V. Chelakara,J. P. Bettencourt,T.E. Kazior,J.R. LaRoche,Theodore D. Kennedy,John J. Mosca,A. Torabi,Kerr Amanda,Hyung-Seok Lee,Tomas Palacios +10 more
TL;DR: In this paper, GaN high electron mobility transistors (HEMTs) were integrated with silicon CMOS to create a functional current mirror circuit, which was fabricated on 100 mm diameter modified silicon-on-insulator (SOI) wafers incorporating a resistive (111) silicon handle substrate and a lightly doped (100) silicon device layer.
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Geometrical effects in high current gain 1100-V 4H-SiC BJTs
Martin Domeij,Hyung-Seok Lee,Erik Danielsson,Carl-Mikael Zetterling,Mikael Östling,Adolf Schöner +5 more
TL;DR: In this article, the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain /spl beta/=64 and a breakdown voltage of 1100 V was reported.