J. E. Bjorkholm

TL;DR: In this article, two new Schwzschi1d cas have been fabricated for the exeme u1avio1et (EUV) lox miostepper and a knifeedge test was used to directly measure the flare of the assembled cameras.

TL;DR: In this article, a laser plasma source of extreme ultraviolet and soft x-ray radiation has been used to print diffraction-limited features using soft x•ray projection lithography, and a spherical condenser optic, a Si/Ge transmissive mask and a Mo/Si multilayer-coated Schwarzschild objective having 20:1 reduction ratio were employed to pattern selected single layer and trilevel resists.

TL;DR: In this article, a phase measuring, lateral shearing interferometer was developed for use with radiation having a wavelength of about 13 nm, which is more than sufficient to determine whether or not an EUV imaging system exhibits diffraction-limited performance.

TL;DR: In this article, a variety of technologies for patterning high resolution Mo/Si multilayer reflective x-ray masks for use at wavelengths near 13 nm were investigated and compared and large area samples were prepared by each of the above methods and reflectivity measurements made to determine the expected mask contrast.

TL;DR: The Engineering Test Stand (ETS) as mentioned in this paper is an EUV lithography tool designed to demonstrate full-field EUV imaging and provide data required to accelerate production-tool development.