S
Sang Hun Lee
Researcher at Intel
Publications - 29
Citations - 439
Sang Hun Lee is an academic researcher from Intel. The author has contributed to research in topics: Extreme ultraviolet lithography & Extreme ultraviolet. The author has an hindex of 13, co-authored 29 publications receiving 434 citations. Previous affiliations of Sang Hun Lee include University of California, Berkeley & Lawrence Berkeley National Laboratory.
Papers
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Journal ArticleDOI
At-wavelength interferometry for extreme ultraviolet lithography
Edita Tejnil,Kenneth A. Goldberg,Sang Hun Lee,Hector Medecki,Phillip J. Batson,Paul Denham,Alastair A. MacDowell,Jeffrey Bokor,David Attwood +8 more
TL;DR: In this paper, a phase shifting point diffraction interferometer was developed for at-wavelength testing of extreme ultraviolet lithographic optical systems, which was implemented to characterize the aberrations of a 10× Schwarzschild multilayer-coated reflective optical system at the operational wavelength of 13.4 nm.
Proceedings ArticleDOI
Implementing flare compensation for EUV masks through localized mask CD resizing
Christof Krautschik,Manish Chandhok,Guojing Zhang,Sang Hun Lee,Michael Goldstein,Eric M. Panning,Bryan J. Rice,Robert L. Bristol,Vivek K. Singh +8 more
TL;DR: In this paper, the authors explore both experimentally and computationally wafer CD compensation though mask CD resizing so that proper CD control across the exposure field can be maintained, and show that even a simple linear CD compensation model can signifantly improve CD contorl in the presence of flare variation.
Proceedings ArticleDOI
Characterization of the accuracy of EUV phase-shifting point diffraction interferometry
Patrick P. Naulleau,Kenneth A. Goldberg,Sang Hun Lee,Chang-Hasnain C. Chang,Cynthia J. Bresloff,Phillip J. Batson,David Attwood,Jeffrey Bokor +7 more
TL;DR: In this article, the phase shifting point diffraction interferometer (PS/PDI) has been used to characterize extreme UV (EUV) projection lithography systems, achieving a systematic error-limited accuracy of 0.004 waves.
Proceedings ArticleDOI
Lithographic flare measurements of EUV full-field projection optics
Sang Hun Lee,Patrick P. Naulleau,Christof Krautschik,Manish Chandhok,Henry N. Chapman,Donna J. O'Connell,Michael Goldstein +6 more
TL;DR: In this article, the authors demonstrate direct flare measurements of 4-mirror projection optics in the Engineering Test Stand (ETS) using a conventional resist clearing method (the Kirk method) using two extreme UV lithographic projection optics, one with higher flare than the other, have been characterized and compared.
Proceedings ArticleDOI
Initial results from the EUV engineering test stand
Daniel A. Tichenor,Avijit K. Ray-Chaudhuri,Sang Hun Lee,Henry N. Chapman,William C. Replogle,Kurt W. Berger,Richard H. Stulen,Glenn D. Kubiak,Leonard E. Klebanoff,John B. Wronosky,Donna J. O'Connell,Alvin H. Leung,Karen J. Jefferson,W. P. Ballard,Layton C. Hale,Kenneth L. Blaedel,John S. Taylor,James A. Folta,Eberhard Spiller,Regina Soufli,Gary E. Sommargren,Donald W. Sweeney,Patrick P. Naulleau,Kenneth A. Goldberg,Eric M. Gullikson,Jeffrey Bokor,David Attwood,Uwe Mickan,Ralph M. Hanzen,Eric M. Panning,Pei-yang Yan,J. E. Bjorkholm,Charles W. Gwyn +32 more
TL;DR: The Engineering Test Stand (ETS) as mentioned in this paper is an EUV lithography tool designed to demonstrate full-field EUV imaging and provide data required to accelerate production-tool development.