M
M. Trejo
Researcher at Air Force Research Laboratory
Publications - 16
Citations - 672
M. Trejo is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 10, co-authored 16 publications receiving 595 citations. Previous affiliations of M. Trejo include Wright-Patterson Air Force Base.
Papers
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Journal ArticleDOI
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
Gregg H. Jessen,Robert C. Fitch,James K. Gillespie,Glen D. Via,Antonio Crespo,D. Langley,D.J. Denninghoff,M. Trejo,Eric R. Heller +8 more
TL;DR: In this paper, an empirically based physical model is presented to predict the expected extrinsic fT for many combinations of gate length and commonly used barrier layer thickness (tbar) on silicon nitride passivated T-gated AlGaN/GaN HEMTs.
Journal ArticleDOI
High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
Antonio Crespo,M.M. Bellot,Kelson D. Chabak,James K. Gillespie,Gregg H. Jessen,V. Miller,M. Trejo,Glen D. Via,D.E. Walker,B.W. Winningham,H. E. Smith,T.A. Cooper,X. Gao,Shiping Guo +13 more
TL;DR: In this article, the first CW Ka-band RF power measurements at 35 GHz from a passivated Al0.82In0.18N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier were reported.
Journal ArticleDOI
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates
Kelson D. Chabak,James K. Gillespie,V. Miller,Antonio Crespo,J.A. Roussos,M. Trejo,Dennis E. Walker,Glen D. Via,Gregg H. Jessen,J. Wasserbauer,Firooz Faili,Dubravko Babic,Daniel Francis,Felix Ejeckam +13 more
TL;DR: In this paper, the first conventionally processed AlGaN/GaN high electron mobility transistors (HEMTs) on free-standing chemical-vapor-deposited (CVD) diamond substrate wafers were reported.
Journal ArticleDOI
Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates
N. Killat,M. Montes,James W Pomeroy,Tanja Paskova,Keith R. Evans,Jacob H. Leach,Xing Li,Ümit Özgür,Hadis Morkoç,Kelson D. Chabak,Antonio Crespo,James K. Gillespie,Robert C. Fitch,M. Kossler,Dennis E. Walker,M. Trejo,Glen D. Via,J. D. Blevins,Martin Kuball +18 more
TL;DR: In this paper, the thermal properties of AlGaN/GaN heterostructure field effect transistors grown on semi-insulating bulk GaN substrates were studied using micro-Raman thermography, microphotoluminescence spectroscopy, and thermal simulation.
Journal ArticleDOI
Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency
Kelson D. Chabak,M. Trejo,Antonio Crespo,Dennis E. Walker,Jinwei Yang,Remis Gaska,M. Kossler,James K. Gillespie,Gregg H. Jessen,Virginia Trimble,Glen D. Via +10 more
TL;DR: In this article, a dc/RF performance of lattice-strained AlInN/GaN high-electron mobility transistors (HEMTs) on SiC substrate was reported.