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Jae Hyuck Jang

Researcher at Seoul National University

Publications -  65
Citations -  3456

Jae Hyuck Jang is an academic researcher from Seoul National University. The author has contributed to research in topics: Thin film & Atomic layer deposition. The author has an hindex of 19, co-authored 57 publications receiving 3042 citations. Previous affiliations of Jae Hyuck Jang include Oak Ridge National Laboratory.

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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
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Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors

TL;DR: In this paper, the authors investigated the resistance switching behavior of Pt∕NiO∕Pt capacitors with various bottom electrode thicknesses tBE and demonstrated the importance of heat dissipation in resistance random access memory.
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Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3–NiFe2O4 composite films

TL;DR: In this article, a Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films consisting of randomly dispersed NiFe 2O4 nanoparticles in the piezoelectric matrix was fabricated.
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Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films

TL;DR: In this paper, the authors fabricated Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films consisting of randomly dispersed NiFe 2O4 nanoparticles in the piezoelectric matrix.
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Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

TL;DR: In this article, a mass-production compatible ALD process of stoichiometric STO films using Ti(O-iPr)2(tmhd)2 as a Ti-precursor for TiO2 layers and Sr(iPr3Cp)2As a Sr-pre-ursor for SrO layers was achieved at a deposition temperature of 370 °C.