Journal ArticleDOI
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TLDR
In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.Abstract:
Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO2/Pt system during resistive switching. In situ current–voltage and low-temperature (∼130 K) conductivity measurements confirm that switching occurs by the formation and disruption of TinO2n−1 (or so-called Magneli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications. Nanoscale filaments with a Magneli structure are shown to be responsible for resistance switching in thin films of TiO2, and the properties of the filaments are directly observed during the switching process.read more
Citations
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Journal ArticleDOI
Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Journal ArticleDOI
Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Journal ArticleDOI
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Zhongrui Wang,Saumil Joshi,Sergey Savel'ev,Hao Jiang,Rivu Midya,Peng Lin,Miao Hu,Ning Ge,John Paul Strachan,Zhiyong Li,Qing Wu,Mark Barnell,Geng Lin Li,Huolin L. Xin,R. Stanley Williams,Qiangfei Xia,Jianhua Yang +16 more
TL;DR: The diffusive Ag-in-oxide memristor and its dynamics enable a direct emulation of both short- and long-term plasticity of biological synapses, representing an advance in hardware implementation of neuromorphic functionalities.
Journal ArticleDOI
Multifunctional wearable devices for diagnosis and therapy of movement disorders
Dong Hee Son,Jongha Lee,Shutao Qiao,Roozbeh Ghaffari,Jaemin Kim,Ji Eun Lee,Changyeong Song,Seok Joo Kim,Dong Jun Lee,Samuel Woojoo Jun,Shixuan Yang,Minjoon Park,Jiho Shin,Kyungsik Do,Min-Cheol Lee,Kwanghun Kang,Cheol Seong Hwang,Nanshu Lu,Taeghwan Hyeon,Dae-Hyeong Kim +19 more
TL;DR: Materials, mechanics and designs for multifunctional, wearable-on-the-skin systems that address technical challenges via monolithic integration of nanomembranes fabricated with a top-down approach, nanoparticles assembled by bottom-up methods, and stretchable electronics on a tissue-like polymeric substrate are described.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Resistive switching in transition metal oxides
TL;DR: In this paper, the authors review the current status of one of the alternatives, resistance random access memory (ReRAM), which uses a resistive switching phenomenon found in transition metal oxides.
Journal ArticleDOI
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
TL;DR: It is demonstrated that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO3, and to be related to the self-doping capability of the early transition metal oxides.