Arthur F. Witulski

TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.

TL;DR: In this paper, the authors examined key parameters affecting charge sharing and quantified relative collected charge at the hit node and adjacent nodes, and showed that for a twin-well CMOS process, PMOS charge sharing can be effectively mitigated with the use of contacted guard-ring, whereas a combination of contact guard ring, nodal separation and interdigitation is required to mitigate the NMOS charge-sharing effect for the technology studied.

TL;DR: In this paper, design oriented criteria are developed for distributed power systems with constant power loads to guarantee stability during large disturbances, where design constraints on the input filter parameters, such as the Q factor, and the amount of "ideal" constant power load that a system can support are placed.

TL;DR: In this paper, the series and parallel resonant topologies, as well as a newly discovered hybrid resonance topology are compared for high-voltage applications and it is found that the parallel topology leads to the lowest peak switch current and the most ideal behavior.

TL;DR: In this article, the distributions of SET pulse-widths produced by heavy ions in 130-nm and 90-nm CMOS technologies are measured experimentally using an autonomous pulse characterization technique.