J
Jian Li
Researcher at University of Virginia
Publications - 3
Citations - 28
Jian Li is an academic researcher from University of Virginia. The author has contributed to research in topics: Electron mobility & Shallow trench isolation. The author has an hindex of 2, co-authored 3 publications receiving 28 citations.
Papers
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Journal ArticleDOI
Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
Guangrui Xia,Hasan M. Nayfeh,Minjoo L. Lee,Eugene A. Fitzgerald,Dimitri A. Antoniadis,Dalaver H. Anjum,Jian Li,Robert Hull,N. Klymko,J.L. Hoyt +9 more
TL;DR: The impact of processing factors such as ion implantation and rapid thermal annealing on mobility enhancement in strained-Si n-channel MOSFETs has been investigated in this paper.
Book ChapterDOI
Three-Dimensional Characterization and Modeling of Stress Distribution in High-Density DRAM Memory Cells
TL;DR: In this paper, a 3D analysis of the stress distribution in and around the active area of high-density memory cells is presented using a combination of high resolution metrology analysis and 3D numerical modeling.
Journal ArticleDOI
Characterization of Ultrathin Strained-Si Channel Layers of n-MOSFETs Using Transmission Electron Microscopy
TL;DR: In this paper, the authors have studied Si+ self ion-implantation and thermally annealed strained-Si channel layers in n-MOSFETs and concluded that electron mobility enhancements can be degraded due to presence of both Ge up-diffusion and defects.