Jiancheng Yang

TL;DR: An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage and there was no significant temperature dependence of trr up to 150 °C.

TL;DR: In this paper, a review of the future device processing needs for Ga203 power electronics is given, where the main devices employed in power converters and wireless charging systems will be vertical rectifiers and metal oxide semiconductor field effect transistors (MOSFETs).

TL;DR: A comparison of two different approaches to detecting cardiac troponin I (cTnI) using antibody-functionalized AlGaN/GaN High Electron Mobility Transistors (HEMTs) and a recently developed method involving pulsed biases applied between a separate functionalized electrode and the gate of the HEMT.

TL;DR: In this article, the authors proposed a method to use the Novel Crystal Technology (NCLT) technology to improve the performance of novel crystal technology in the field of artificial intelligence.

TL;DR: In this paper, a Ga2O3 rectifier with vertical geometry was subject to alpha particle irradiation at fluences of 1012-1013 cm−2, simulating space radiation exposure.