抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

The need to develop inexpensive renewable energy sources stimulates scientific research for efficient, low-cost photovoltaic devices.1 The organic, polymer-based photovoltaic elements have introduced at least the potential of obtaining cheap and easy methods to produce energy from light.2 The possibility of chemically manipulating the material properties of polymers (plastics) combined with a variety of easy and cheap processing techniques has made polymer-based materials present in almost every aspect of modern society.3 Organic semiconductors have several advantages: (a) lowcost synthesis, and (b) easy manufacture of thin film devices by vacuum evaporation/sublimation or solution cast or printing technologies. Furthermore, organic semiconductor thin films may show high absorption coefficients4 exceeding 105 cm-1, which makes them good chromophores for optoelectronic applications. The electronic band gap of organic semiconductors can be engineered by chemical synthesis for simple color changing of light emitting diodes (LEDs).5 Charge carrier mobilities as high as 10 cm2/V‚s6 made them competitive with amorphous silicon.7 This review is organized as follows. In the first part, we will give a general introduction to the materials, production techniques, working principles, critical parameters, and stability of the organic solar cells. In the second part, we will focus on conjugated polymer/fullerene bulk heterojunction solar cells, mainly on polyphenylenevinylene (PPV) derivatives/(1-(3-methoxycarbonyl) propyl-1-phenyl[6,6]C61) (PCBM) fullerene derivatives and poly(3-hexylthiophene) (P3HT)/PCBM systems. In the third part, we will discuss the alternative approaches such as polymer/polymer solar cells and organic/inorganic hybrid solar cells. In the fourth part, we will suggest possible routes for further improvements and finish with some conclusions. The different papers mentioned in the text have been chosen for didactical purposes and cannot reflect the chronology of the research field nor have a claim of completeness. The further interested reader is referred to the vast amount of quality papers published in this field during the past decade.

Conjugated polymer-based organic solar cells

Recent years have seen a rapid growth of interest by the scientific and engineering communities in the thermal properties of materials. Heat removal has become a crucial issue for continuing progress in the electronic industry, and thermal conduction in low-dimensional structures has revealed truly intriguing features. Carbon allotropes and their derivatives occupy a unique place in terms of their ability to conduct heat. The room-temperature thermal conductivity of carbon materials span an extraordinary large range--of over five orders of magnitude--from the lowest in amorphous carbons to the highest in graphene and carbon nanotubes. Here, I review the thermal properties of carbon materials focusing on recent results for graphene, carbon nanotubes and nanostructured carbon materials with different degrees of disorder. Special attention is given to the unusual size dependence of heat conduction in two-dimensional crystals and, specifically, in graphene. I also describe the prospects of applications of graphene and carbon materials for thermal management of electronics.

Thermal properties of graphene and nanostructured carbon materials

BACKGROUND Materials by design is an appealing idea that is very hard to realize in practice. Combining the best of different ingredients in one ultimate material is a task for which we currently have no general solution. However, we do have some successful examples to draw upon: Composite materials and III-V heterostructures have revolutionized many aspects of our lives. Still, we need a general strategy to solve the problem of mixing and matching crystals with different properties, creating combinations with predetermined attributes and functionalities. ADVANCES Two-dimensional (2D) materials offer a platform that allows creation of heterostructures with a variety of properties. One-atom-thick crystals now comprise a large family of these materials, collectively covering a very broad range of properties. The first material to be included was graphene, a zero-overlap semimetal. The family of 2D crystals has grown to includes metals (e.g., NbSe 2 ), semiconductors (e.g., MoS 2 ), and insulators [e.g., hexagonal boron nitride (hBN)]. Many of these materials are stable at ambient conditions, and we have come up with strategies for handling those that are not. Surprisingly, the properties of such 2D materials are often very different from those of their 3D counterparts. Furthermore, even the study of familiar phenomena (like superconductivity or ferromagnetism) in the 2D case, where there is no long-range order, raises many thought-provoking questions. A plethora of opportunities appear when we start to combine several 2D crystals in one vertical stack. Held together by van der Waals forces (the same forces that hold layered materials together), such heterostructures allow a far greater number of combinations than any traditional growth method. As the family of 2D crystals is expanding day by day, so too is the complexity of the heterostructures that could be created with atomic precision. When stacking different crystals together, the synergetic effects become very important. In the first-order approximation, charge redistribution might occur between the neighboring (and even more distant) crystals in the stack. Neighboring crystals can also induce structural changes in each other. Furthermore, such changes can be controlled by adjusting the relative orientation between the individual elements. Such heterostructures have already led to the observation of numerous exciting physical phenomena. Thus, spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system. The possibility of positioning crystals in very close (but controlled) proximity to one another allows for the study of tunneling and drag effects. The use of semiconducting monolayers leads to the creation of optically active heterostructures. The extended range of functionalities of such heterostructures yields a range of possible applications. Now the highest-mobility graphene transistors are achieved by encapsulating graphene with hBN. Photovoltaic and light-emitting devices have been demonstrated by combining optically active semiconducting layers and graphene as transparent electrodes. OUTLOOK Currently, most 2D heterostructures are composed by direct stacking of individual monolayer flakes of different materials. Although this method allows ultimate flexibility, it is slow and cumbersome. Thus, techniques involving transfer of large-area crystals grown by chemical vapor deposition (CVD), direct growth of heterostructures by CVD or physical epitaxy, or one-step growth in solution are being developed. Currently, we are at the same level as we were with graphene 10 years ago: plenty of interesting science and unclear prospects for mass production. Given the fast progress of graphene technology over the past few years, we can expect similar advances in the production of the heterostructures, making the science and applications more achievable.

2D materials and van der Waals heterostructures

There has been an intensive search for cost-effective photovoltaics since the development of the first solar cells in the 1950s. [1–3] Among all alternative technologies to silicon-based pn-junction solar cells, organic solar cells could lead the most significant cost reduction. [4] The field of organic photovoltaics (OPVs) comprises organic/inorganic nanostructures like dyesensitized solar cells, multilayers of small organic molecules, and phase-separated mixtures of organic materials (the bulkheterojunction solar cell). A review of several OPV technologies has been presented recently. [5] Light absorption in organic solar cells leads to the generation of excited, bound electron– hole pairs (often called excitons). To achieve substantial energy-conversion efficiencies, these excited electron–hole pairs need to be dissociated into free charge carriers with a high yield. Excitons can be dissociated at interfaces of materials with different electron affinities or by electric fields, or the dissociation can be trap or impurity assisted. Blending conjugated polymers with high-electron-affinity molecules like C60 (as in the bulk-heterojunction solar cell) has proven to be an efficient way for rapid exciton dissociation. Conjugated polymer–C60 interpenetrating networks exhibit ultrafast charge transfer (∼40 fs). [6,7] As there is no competing decay process of the optically excited electron–hole pair located on the polymer in this time regime, an optimized mixture with C60 converts absorbed photons to electrons with an efficiency close to 100%. [8] The associated bicontinuous interpenetrating network enables efficient collection of the separated charges at the electrodes. The bulk-heterojunction solar cell has attracted a lot of attention because of its potential to be a true low-cost photovoltaic technology. A simple coating or printing process would enable roll-to-roll manufacturing of flexible, low-weight PV modules, which should permit cost-efficient production and the development of products for new markets, e.g., in the field of portable electronics. One major obstacle for the commercialization of bulk-heterojunction solar cells is the relatively small device efficiencies that have been demonstrated up to now. [5] The best energy-conversion efficiencies published for small-area devices approach 5%. [9–11] A detailed analysis of state-of-the-art bulk-heterojunction solar cells [8] reveals that the efficiency is limited by the low opencircuit voltage (Voc) delivered by these devices under illumination. Typically, organic semiconductors with a bandgap of about 2 eV are applied as photoactive materials, but the observed open-circuit voltages are only in the range of 0.5–1 V. There has long been a controversy about the origin of the Voc in conjugated polymer–fullerene solar cells. Following the classical thin-film solar-cell concept, the metal–insulator–metal (MIM) model was applied to bulk-heterojunction devices. In the MIM picture, Voc is simply equal to the work-function difference of the two metal electrodes. The model had to be modified after the observation of the strong influence of the reduction potential of the fullerene on the open-circuit volt

Design Rules for Donors in Bulk‐Heterojunction Solar Cells—Towards 10 % Energy‐Conversion Efficiency

Ultraviolet semiconductor lasers are widely used for applications in photonics, information storage, biology and medical therapeutics. Although the performance of gallium nitride ultraviolet lasers has improved significantly over the past decade, demand for lower costs, higher powers and shorter wavelengths has motivated interest in zinc oxide (ZnO), which has a wide direct bandgap and a large exciton binding energy. ZnO-based random lasing has been demonstrated with both optical and electrical pumping, but random lasers suffer from reduced output powers, unstable emission spectra and beam divergence. Here, we demonstrate electrically pumped Fabry-Perot type waveguide lasing from laser diodes that consist of Sb-doped p-type ZnO nanowires and n-type ZnO thin films. The diodes exhibit highly stable lasing at room temperature, and can be modelled with finite-difference time-domain methods.

/pdf/electrically-pumped-waveguide-lasing-from-zno-nanowires-1qeimehmsu.pdf

Electrically pumped waveguide lasing from ZnO nanowires

The carrier recombination processes in ZnO quantum dots ($\ensuremath{\sim}4\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ in diameter), ZnO nanocrystals ($\ensuremath{\sim}20\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ in diameter) and bulk ZnO crystal have been studied using photoluminescence (PL) spectroscopy in the temperature range from $8.5\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The obtained experimental data suggest that the ultraviolet PL in ZnO quantum dots originates from recombination of the acceptor-bound excitons for all temperatures. In the larger size ZnO nanocrystals, the recombination of the acceptor-bound excitons is the dominant contribution to PL only at low temperature $(Tl150\phantom{\rule{0.3em}{0ex}}\mathrm{K})$. For higher temperatures $(Tg150\phantom{\rule{0.3em}{0ex}}\mathrm{K})$, PL is mostly due to recombination of the donor-bound excitons. Recombination processes in ZnO quantum dots and nanocrystals differ from those in bulk ZnO mainly because of the large surface-to-volume ratio in both types of nanoparticles and, consequently, a large number of acceptor defects near the surface. No strong inhomogeneous broadening has been observed in ultraviolet PL from ZnO quantum dots. Our results shed light on the carrier-recombination processes in ZnO quantum dots and nanocrystals, and can be used for the ZnO nanostructure optimization for the proposed optoelectronic and spintronic applications.

http://www.faculty.ucr.edu/~vladimf/PRB-ZnO-PL.pdf

Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals

Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A°X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2Ωcm, high hole concentration of 1.7×1018cm−3 and high mobility of 20.0cm2∕Vs. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication.

/pdf/high-mobility-sb-doped-p-type-zno-by-molecular-beam-epitaxy-3rqeu09ts6.pdf

High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy

Polymer-based photovoltaic devices have been fabricated by blending the conjugated polymer, poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) with the buckminsterfullerene, C60. The photo-induced current and the open-circuit voltage show a strong dependence on the polymer processing conditions. It was found that the photovoltaic devices fabricated with tetrahydrofuran or chloroform (non-aromatic solvents) have smaller photocurrents under same reverse bias as well as higher open circuit voltages than the devices fabricated with xylene, dichlorobenzene, or chlorobenzene (aromatic solvents). The device performance dependence on the processing solvent is attributed to the different solvation-induced polymer morphology.

Solvation-Induced Morphology Effects on the Performance of Polymer-Based Photovoltaic Devices

Electrically pumped ZnO quantum well diode lasers are reported. Sb-doped p-type ZnO/Ga-doped n-type ZnO with an MgZnO/ZnO/MgZnO quantum well embedded in the junction was grown on Si by molecular beam epitaxy. The diodes emit lasing at room temperature with a very low threshold injection current density of 10 A/cm2. The lasing mechanism is exciton-related recombination and the feedback is provided by close-loop scattering from closely packed nanocolumnar ZnO grains formed on Si.

/pdf/electrically-pumped-ultraviolet-zno-diode-lasers-on-si-1zjk4lyvfr.pdf

Jianlin Liu

Papers

Electrically pumped waveguide lasing from ZnO nanowires

Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals

High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy

Solvation-Induced Morphology Effects on the Performance of Polymer-Based Photovoltaic Devices

Electrically pumped ultraviolet ZnO diode lasers on Si