Journal ArticleDOI
High-gain phototransistors based on a CVD MoS₂ monolayer.
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TLDR
A phototransistor based on a chemical vapor deposited MoS2 monolayer exhibits a high photoresponsivity and an excellent photogain and the presence of shallow traps contributes to the persistent photoconductivity.Abstract:
A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W(-1) ) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS2 , decreasing the carrier mobility, photoresponsivity, and photogain.read more
Citations
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Journal ArticleDOI
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
TL;DR: By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
Journal ArticleDOI
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.
Rajesh Kappera,Damien Voiry,Sibel Ebru Yalcin,Brittany Branch,Gautam Gupta,Aditya D. Mohite,Manish Chhowalla +6 more
TL;DR: It is demonstrated that the metallic 1T phase of MoS2 can be locally induced on semiconducting 2H phase nanosheets, thus decreasing contact resistances to 200-300 Ω μm at zero gate bias.
Journal ArticleDOI
Few-Layer MoS2: A Promising Layered Semiconductor
Rudren Ganatra,Qing Zhang +1 more
TL;DR: This review attempts to provide an overview of the research relevant to the structural and physical properties, fabrication methods, and electronic devices of few-layer MoS2.
Journal ArticleDOI
Monolayer MoS2 Heterojunction Solar Cells
Meng-Lin Tsai,Meng-Lin Tsai,Sheng-Han Su,Sheng-Han Su,Jan-Kai Chang,Dung-Sheng Tsai,Chang-Hsiao Chen,Chih-I Wu,Lain-Jong Li,Lain-Jong Li,Lih-Juann Chen,Jr-Hau He,Jr-Hau He +12 more
TL;DR: The demonstrated results of monolayer MoS2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices.
Journal ArticleDOI
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
Wenjing Zhang,Chih Piao Chuu,Jing Kai Huang,Chang-Hsiao Chen,Meng-Lin Tsai,Yung Huang Chang,Chi-Te Liang,Yu Ze Chen,Yu-Lun Chueh,Jr-Hau He,Mei-Yin Chou,Lain-Jong Li +11 more
TL;DR: It is demonstrated that a photodetector based on the graphene/MoS2 heterostructure is able to provide a high photogain greater than 108 and graphene is transferable onto MoS2.
References
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Journal ArticleDOI
Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
A roadmap for graphene
Kostya S. Novoselov,Vladimir I. Fal'ko,Luigi Colombo,Paul Gellert,M. G. Schwab,Kyoung-Soo Kim +5 more
TL;DR: This work reviews recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.
Journal ArticleDOI
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
TL;DR: This Review describes how the tunable electronic structure of TMDs makes them attractive for a variety of applications, as well as electrically active materials in opto-electronics.
Journal ArticleDOI
Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang,Feng Wang +8 more
TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.