Johan Bremer

TL;DR: In this article, an electric-based methodology for thermal characterization of semiconductor technologies is presented, where the electric field is limited to low levels to avoid activation of trap states and the dissipated power needs to be high enough to change the operating temperature of the device.

TL;DR: In this paper, the authors derived the signal-to-noise and distortion ratio (SNDR) for low noise amplifiers (LNA) from the commonly specified parameters noise figure, gain, third order output intercept point and 1 dB compression point.

TL;DR: In this paper, the lateral heat propagation in an AlGaN/GaN heterostructure grown on a silicon carbide substrate was investigated using a temperature sensor that utilizes the temperature-dependent $I$ − $V$ characteristic of a semiconductor resistor, making it suitable for integration in GaN monolithic microwave integrated circuit technologies.

TL;DR: In this paper, the authors investigated the possibility of using a dynamic bias control scheme for a low noise amplifier to compensate for performance degradation due to thermal effects and found that the performance, in terms of gain, linearity and noise, degraded at elevated chip temperatures.

TL;DR: In this article, the thermal properties of a compact, heterogeneously integrated gallium nitride on silicon carbide (GaN-on-SiC) and silicon assembly are investigated.