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Proceedings ArticleDOI

Optimizing the Signal-to-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias

TLDR
In this paper, the authors derived the signal-to-noise and distortion ratio (SNDR) for low noise amplifiers (LNA) from the commonly specified parameters noise figure, gain, third order output intercept point and 1 dB compression point.
Abstract
This paper shows how the signal-to-noise and distortion ratio (SNDR) for low noise amplifiers (LNA) can be derived from the commonly specified parameters noise figure, gain, third order output intercept point and 1 dB compression point. The parameters dependency of the biasing of the amplifier are also incorporated which enables the possibility to study how SNDR can be optimized for different operating conditions by dynamically change the gate- and drain voltage. An experimental verification shows that improvements in SNDR can be achieved by selecting gate- and drain voltage of the LNA according to the level of the input signal power.

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Citations
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Journal ArticleDOI

Instinctual Interference-Adaptive Low-Power Receiver With Combined Feedforward and Feedback Control

TL;DR: An interference-adaptive receiver with a control loop and on-board commercial off-the-shelf (COTS) components that adapt a 2–6-GHz low-noise amplifier from a low-power mode to high-linearity mode with no interference.
Journal ArticleDOI

Sub-1ms Instinctual Interference Adaptive GaN LNA Front-End with Power and Linearity Tuning

TL;DR: In this paper , a 2-6 GHz GaN LNA front-end with onboard sensing, processing, and feedback utilizing microcontroller-based controls to achieve adaptation to a variety of interference scenarios through power and linearity regulations is presented.
References
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Book

Intermodulation Distortion in Microwave and Wireless Circuits

TL;DR: In conclusion, signal pertubation IMD characterization techniques nonlinear analysis techniques non linear device modelling highly linear circuit design and nonlinear device modelling techniques are introduced.
Journal ArticleDOI

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

TL;DR: In this article, a MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed, based on microstrip technology with a complete model library of passive elements and HEMTs.
Journal ArticleDOI

Thermal Study of the High-Frequency Noise in GaN HEMTs

TL;DR: In this article, the authors studied the high-frequency noise performance of the GaN HEMT for temperatures between 297-398 K and found that RS and RD have a limiting effect on the noise performance.
Journal ArticleDOI

Evaluation of signal-to-noise and distortion ratio degradation in nonlinear systems

TL;DR: In this article, the authors presented a new figure-of-merit to evaluate signal-to-noise and distortion ratio degradation in nonlinear systems, referred to as the noise and distortion figure (NDF).
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