Jongwook Jeon

TL;DR: In this article, the authors analyzed the localized thermal effect caused by self-heating effect (SE) in 5-nm bulk FinFETs that are scaled down, following the International Technology Roadmap for Semiconductors.

TL;DR: A model of characteristic length for a macaroni MOSFET is introduced for the first time by deriving the two-dimensional Poisson’s equation, useful for deriving sub-threshold characteristics and also for device design.

TL;DR: The radiation effects on a multi-nanosheet tunneling-based field effect transistor (NS-TFET) were investigated for a 3-nm technology node using a 3D technology computer-aided design (TCAD) simulator and can provide a guideline by which to design a robust integrated circuit for radiation that is totally different from the conventional DD-FET approach.

TL;DR: In this paper, various characteristics of nanoplate FET were studied based on TCAD simulation for a 3-nm node and the optimum geometry specification was proposed through comparison of RC delay from previous studies.

TL;DR: Wang et al. as discussed by the authors analyzed lateral migration mechanism during the retention operation in 3-D NAND flash memories, and the activation energy of lateral migration was extracted by adopting the Arrhenius relationship.