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Jun Kang

Researcher at Lawrence Berkeley National Laboratory

Publications -  113
Citations -  8456

Jun Kang is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Band gap & Graphene. The author has an hindex of 37, co-authored 104 publications receiving 6581 citations. Previous affiliations of Jun Kang include Chinese Academy of Sciences & Zhejiang Normal University.

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Band offsets and heterostructures of two-dimensional semiconductors

TL;DR: In this paper, the band offsets and heterostructures of monolayer and few-layer transition-metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) are investigated from first principles calculations.
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High Defect Tolerance in Lead Halide Perovskite CsPbBr3

TL;DR: Interestingly, CsPbBr3 is found to be highly defect-tolerant in terms of its electronic structure, which can maintain its good electronic quality despite the presence of defects.
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Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

TL;DR: This work demonstrates large-area (>tens of micrometers) heterostructures of CVD-grown WS2 and MoS2 monolayers, where the interlayer interaction is externally tuned from noncoupling to strong coupling, which opens up venues to creating new material systems with rich functionalities and novel physical effects.
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Design Principles for Trap-Free CsPbX3 Nanocrystals: Enumerating and Eliminating Surface Halide Vacancies with Softer Lewis Bases.

TL;DR: This work provides a systematic framework for preparing highly luminescent CsPbX3 nanocrystals with variable compositions and dimensionalities, thereby improving the fundamental understanding of these materials and informing future synthetic and post-synthetic efforts toward trap-free CspbX2 nanocrystal efforts.
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Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors

TL;DR: In this article, the multilayer van der Waals heterostructures with different configurations are reported and their optoelectronic properties are studied and shown to possess new functionalities and superior electrical and optical properties that far exceed the one for their constituents, MoS2 or WS2.