Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

and Perspectives Sophie Carenco,†,‡,§,∥,⊥ David Portehault,*,†,‡,§ Ced́ric Boissier̀e,†,‡,§ Nicolas Meźailles, and Cleḿent Sanchez*,†,‡,§ †Chimie de la Matier̀e Condenseé de Paris, UPMC Univ Paris 06, UMR 7574, Colleg̀e de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France ‡Chimie de la Matier̀e Condenseé de Paris, CNRS, UMR 77574, Colleg̀e de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France Chimie de la Matier̀e Condenseé de Paris, Colleg̀e de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France Laboratory Heteroelements and Coordination, Chemistry Department, Ecole Polytechnique, CNRS-UMR 7653, Palaiseau, France

Nanoscaled metal borides and phosphides: recent developments and perspectives

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

https://ieeexplore.ieee.org/ielaam/41/8031005/7815312-aam.pdf

Review of Silicon Carbide Power Devices and Their Applications

1Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Phone:+81-3-5841-7093 E-mail: m-abe@castle.t.u-tokyo.ac.jp 2Department of Electrical, Electronic, and Communication Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551, Japan 3Department of Electronic Science and Engineering, Kyoto University, Kyoto Daigaku Katsura, Nishikyo-ku, Kyoto 615-8101, Japan 4Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan 5Frontier Reserch Center, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Accurate Measurement of Nonlinear Optical Coefficients of Gallium Nitride

Sulfur treatment of GaAs (001) using hydrogen sulfide to obtain a (2×6) S-terminated surface is presented. When a GaAs substrate with no epitaxial buffer layer is annealed at up to 580°C in a high vacuum (< 1 ×10-9 Torr), a mixture of (3×6) and (4×6) Ga-terminated reconstructions is observed. After cooling of the substrate to 300°C and irradiating it with hydrogen sulfide, a clear (2×6) S-terminated surface reconstruction appears in a few minutes.

(2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation

Temperature and injection level dependencies of carrier lifetimes in p-type and n-type 4H-SiC epilayers have been investigated. The carrier lifetimes have been measured by differential microwave photoconductance decay measurements at various injection levels and temperatures. In both p-type and n-type epilayers, the carrier lifetimes gradually increased with increasing the injection level except for the very high injection condition. And the carrier lifetimes exhibited continuous increase with elevating the temperature for both epilayers. The carrier lifetime reached 3.3 µs in p-type and 4.2 µs in n-type epilayers at 250°C and an injection level of 1.8x1016 cm-3.

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers

Impact of channel mobility on design optimization of 600–3300 V-class high-speed GaN vertical-trench MOSFETs based on TCAD simulation

Non-polar AlN epitaxial growth on SiC substrates with the (11–20) face, which is parallel to the 〈0001〉 direction, has been investigated. AlN(11–20) epilayers were grown on 6H- and 4H-SiC(11–20) substrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen. The crystalline structure of the AlN layer was strongly influenced by the stacking structure of the SiC substrate. A considerably smooth AlN(11–20) layer with an rms roughness of 0.3 nm was obtained on the 4H-SiC(11–20) substrate. From the results of X-ray diffraction (XRD), the superior crystalline quality of the AlN(11–20) layer on the 4H-SiC(11–20) substrate was clearly shown.

Jun Suda

Papers

Accurate Measurement of Nonlinear Optical Coefficients of Gallium Nitride

(2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers

Impact of channel mobility on design optimization of 600–3300 V-class high-speed GaN vertical-trench MOSFETs based on TCAD simulation

Growth of high-quality non-polar AlN on 4H-SiC(11–20) substrate by molecular-beam epitaxy