J
Jun Suda
Researcher at Nagoya University
Publications - 384
Citations - 6165
Jun Suda is an academic researcher from Nagoya University. The author has contributed to research in topics: Epitaxy & Molecular beam epitaxy. The author has an hindex of 36, co-authored 362 publications receiving 5095 citations. Previous affiliations of Jun Suda include Panasonic & Chukyo University.
Papers
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Impact of surface step heights of 6H–SiC (0 0 0 1) vicinal substrates in heteroepitaxial growth of 2H–AlN
TL;DR: In this article, the impact of step height of silicon carbide (SiC) substrates on heteroepitaxial growth of aluminum nitride (AlN) was investigated.
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Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC
S. Sasaki,Jun Suda,T. Kimoto +2 more
TL;DR: In this paper, the lattice parameters of high-dose ion-implanted 4H-SiC were investigated with reciprocal space mapping (RSM) images for (0008) reflection.
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Hall scattering factors in p-type 4H-SiC with various doping concentrations
TL;DR: The Hall scattering factor (γH) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 × 1014-7.1 × 1018 cm−3 was investigated from 300 to 900 K as discussed by the authors.
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Spiral Crystal Growth of Potassium Dichromate in Gelatin
Jun Suda,Mitsugu Matsushita +1 more
TL;DR: In this article, huge spiral crystals of potassium dichromate (K 2 Cr 2 O 7 ) have been found to grow 3D in a gelatin medium when gelatin containing K 2 Cr O 7 was dried slowly in a test tube at a low temperature.
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ZrB2 Substrate for Nitride Semiconductors
Hiroyuki Kinoshita,Shigeki Otani,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki,Jun Suda,Hiroyuki Matsunami +6 more
TL;DR: In this article, a 20mm-diameter Zirconium diboride (ZrB2) single crystal was obtained by optimizing the bulk growth conditions, and the cleavage direction was confirmed to be parallel to [1120, which is parallel to that of GaN (0001).