Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

and Perspectives Sophie Carenco,†,‡,§,∥,⊥ David Portehault,*,†,‡,§ Ced́ric Boissier̀e,†,‡,§ Nicolas Meźailles, and Cleḿent Sanchez*,†,‡,§ †Chimie de la Matier̀e Condenseé de Paris, UPMC Univ Paris 06, UMR 7574, Colleg̀e de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France ‡Chimie de la Matier̀e Condenseé de Paris, CNRS, UMR 77574, Colleg̀e de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France Chimie de la Matier̀e Condenseé de Paris, Colleg̀e de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France Laboratory Heteroelements and Coordination, Chemistry Department, Ecole Polytechnique, CNRS-UMR 7653, Palaiseau, France

Nanoscaled metal borides and phosphides: recent developments and perspectives

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

https://ieeexplore.ieee.org/ielaam/41/8031005/7815312-aam.pdf

Review of Silicon Carbide Power Devices and Their Applications

Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy

https://iopscience.iop.org/article/10.1088/1361-6463/aad26a/pdf

Carrier lifetime and breakdown phenomena in SiC power device material

Designing and fabrication of 4H-SiC (0001) lateral MOSFETs with a double reduced surface field (RESURF) structure have been investigated to reduce ON resistance. In order to achieve high breakdown voltage, a two-zone RESURF structure was also employed in addition to the double RESURF structure. The simulated double RESURF MOSFETs with optimum doses exhibit slightly higher breakdown voltage and lower drift resistance than the simulated single RESURF MOSFETs. The double RESURF structure is attractive to suppress oxide breakdown at gate edge. After the device simulation for dose optimization, the 4H-SiC two-zone double RESURF MOSFETs have been fabricated by using a self-aligned process. The fabricated MOSFET has demonstrated a high breakdown voltage of 1380 V and a low ON resistance of 66 mOmegamiddotcm2 (including a drift resistance of 24 mOmegamiddotcm2). The drift resistance of the fabricated double RESURF MOSFETs is only 50% or even lower than that of the single RESURF MOSFETs

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4H–SiC Lateral Double RESURF MOSFETs With Low on Resistance

In this study, to reveal the origin of the Z1∕2 center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z1∕2 center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z1∕2 concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (VC) measured by EPR under light illumination can well be explained with the Z1∕2 concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z1∕2 center originates from a single VC.

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Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

We report the improvement of current gain in 4H-SiC bipolar junction transistors (BJTs) by utilizing deposited oxides as a surface passivation layer. Various post deposition annealing processes, including annealing ambient (N2, N2O, and NO) and annealing time, were investigated. We successfully demonstrate SiC BJTs with high current gains (β) of 73 and 102 using deposited oxides annealed in N2O and NO, respectively, whereas BJTs having conventional thermally grown oxides showed a current gain of 50.

Jun Suda

Papers

Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy

Carrier lifetime and breakdown phenomena in SiC power device material

4H–SiC Lateral Double RESURF MOSFETs With Low on Resistance

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in $\hbox{N}_{2}\hbox{O}$ or NO