J
Jun Suda
Researcher at Nagoya University
Publications - 384
Citations - 6165
Jun Suda is an academic researcher from Nagoya University. The author has contributed to research in topics: Epitaxy & Molecular beam epitaxy. The author has an hindex of 36, co-authored 362 publications receiving 5095 citations. Previous affiliations of Jun Suda include Panasonic & Chukyo University.
Papers
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Journal ArticleDOI
Hydrogen Implantation and Annealing-Induced Exfoliation Process in SiC Wafers with Various Crystal Orientations
TL;DR: In this article, the influence of time and temperature on the blistering rate of 4H-SiC wafers with various orientations, on-axis and 8° off-axis (0001), (1100), and (1120).
Proceedings ArticleDOI
Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect
Takuya Maeda,Tetsuo Narita,Hiroyuki Ueda,Masakazu Kanechika,Tsutomu Uesugi,Tetsu Kachi,Tsunenobu Kimoto,Masahiro Horita,Jun Suda +8 more
TL;DR: In this article, the authors investigated the valanche multiplication characteristics in GaN p-n junction diodes under high reverse bias conditions and showed that the photocurrent induced by the Franz-Keldysh effect can be well reproduced by the theoretical calculations of the optical absorption, and their avalanche multiplications were observed.
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Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)
TL;DR: In this paper, the phonon frequencies of a high-quality AlN layer coherently grown on a 6H-SiC (0001) substrate are investigated by Raman scattering.
Journal ArticleDOI
Phonon anharmonicity of phonon band gap effect of scheelite PbWO4 studied by Raman spectrometry and first-principles calculations
TL;DR: In this paper, the phonon dispersions of PbWO4 crystal were calculated using the first-principles calculations and lattice perturbative approach, and it was found that the different behaviors of these two modes in the case of temperature broadening could be attributed to the large energy band gap in the PDOS (onephon density of states) resulting in different anharmonic interactions.
Journal ArticleDOI
Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
TL;DR: In this paper, the authors used micro-photoluminescence spectroscopy and its intensity mapping to investigate the planar defects, stacking faults (SFs), in 4H-SiC epilayers.