J
Jun Suda
Researcher at Nagoya University
Publications - 384
Citations - 6165
Jun Suda is an academic researcher from Nagoya University. The author has contributed to research in topics: Epitaxy & Molecular beam epitaxy. The author has an hindex of 36, co-authored 362 publications receiving 5095 citations. Previous affiliations of Jun Suda include Panasonic & Chukyo University.
Papers
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Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation
TL;DR: In this article, a hybrid unipolar/bipolar operation with a merged p-i-n Schottky (MPS) diode with an epitaxial p+-anode layer is proposed to reduce the conduction loss of a bipolar device in the low current region.
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Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
TL;DR: In this article, the first layer of 300-nm-thick AlN was grown on 6H-SiC(0001) with six Si-C bilayer-height (1.5 nm) steps by rf-plasma-assisted molecular-beam epitaxy (MBE).
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1330 V, 67 m/spl Omega//spl middot/cm/sup 2/ 4H-SiC(0001) RESURF MOSFET
T. Kimoto,H. Kawano,Jun Suda +2 more
TL;DR: In this paper, the design and fabrication of 4H-SiC(0001) lateral MOSFETs with a two-zone reduced surface field structure have been investigated, and the dose dependencies of experimental breakdown voltage show good agreement with simulation.
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Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy
TL;DR: In this article, the lattice relaxation process of AlN growth on an atomically flat 6H-SiC (0, 0,0,1) Si substrate was investigated by using high-resolution X-ray diffraction.
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Interface state density of SiO2/p-type 4H-SiC (0001), (112¯0), (11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes
TL;DR: In this paper, the interface properties of heavily Al-doped 4H-SiC ( 0001) (Si-face), a-, a-, and m-faces were characterized from the low-temperature gate characteristics of metal-oxide-semiconductor field effect transistors (MOSFETs).