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Jun Suda

Researcher at Nagoya University

Publications -  384
Citations -  6165

Jun Suda is an academic researcher from Nagoya University. The author has contributed to research in topics: Epitaxy & Molecular beam epitaxy. The author has an hindex of 36, co-authored 362 publications receiving 5095 citations. Previous affiliations of Jun Suda include Panasonic & Chukyo University.

Papers
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Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes

TL;DR: In this article, an improved bevel mesa structure and a single-zone junction termination extension (JTE) have been employed to achieve a high breakdown voltage (ges 10 kV).
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21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension

TL;DR: In this article, a SiC mesa PiN diode with a breakdown voltage of 21.7 kV is presented, which is the highest breakdown voltage among any semiconductor devices ever reported.
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4H-SiC MISFETs with nitrogen-containing insulators

TL;DR: In this article, N2O-grown oxides, the oxidation of a surface layer co-implanted with N+ and Al+, and deposited SiO2 annealed in N 2 O and NO, were used to improve the channel mobility of 4H-SiC MIS capacitors.
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Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation

TL;DR: In this paper, SiN passivation on AlGaN∕GaN heterostructures was carried out using catalytic or plasma-enhanced chemical vapor deposition (Cat-CVD or PECVD), which has been found to increase two-dimensional electron gas (2DEG) density.