J
Jun Suda
Researcher at Nagoya University
Publications - 384
Citations - 6165
Jun Suda is an academic researcher from Nagoya University. The author has contributed to research in topics: Epitaxy & Molecular beam epitaxy. The author has an hindex of 36, co-authored 362 publications receiving 5095 citations. Previous affiliations of Jun Suda include Panasonic & Chukyo University.
Papers
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Proceedings ArticleDOI
High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N2O Annealing
Proceedings ArticleDOI
Conduction-type dependence of thermal oxidation rate on SiC(0001)
TL;DR: The conduction-type dependent thermal oxidation rate in SiC was discovered in this paper, and it was shown that for n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness decreases.
Proceedings ArticleDOI
Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
Akira Uedono,Hideki Sakurai,Tetsuo Narita,Kacper Sierakowski,Michal Bockowski,Jun Suda,Shoji Ishibashi,Shigefusa F. Chichibu,Tetsu Kachi +8 more
TL;DR: In this paper, the diffusion of Mg during annealing was influenced by the presence of residual vacancies, and its diffusion property were also affected by H was unintentionally incorporated into the sample.
Proceedings ArticleDOI
Impacts of orientation and cross-sectional shape on hole mobility of Si nanowire MOSFETs
TL;DR: In this paper, the hole mobilities of SiNW MOSFETs were about 80-140 cm2/Vs at surface carrier density of 1 × 1013 cm−2, and dependences of the hole mobility on orientations and cross-sectional shapes of nanowires were analyzed.
Journal ArticleDOI
Reduction of on-resistance in 4H-SiC multi-RESURF MOSFETs
TL;DR: In this article, a SiC lateral MOSFET with multi-resurf structures has been fabricated by a self-aligned process, where double and buried-p RESURF structures have been optimized by using device simulation.