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Showing papers by "Junsin Yi published in 2020"


Journal ArticleDOI
TL;DR: In this paper, the effect of the characteristics of thin films on the electrical characteristics of TFT devices according to the sputtering method was investigated, which has attracted attention as an a-IGZO channel layer deposition method.

27 citations


Journal ArticleDOI
TL;DR: In this paper, a Si-embedded metal-oxide heterojunction for transparent photovoltaic (TPV) was proposed, where a thin Si film was embedded between p-NiO and n-ZnO to improve TPV performances according to the enhanced quantum efficiency as well as the extended absorbing light.

26 citations


Journal ArticleDOI
TL;DR: In this article, a stable, simple and scalable heterojunction (TiO2/Co3O4) thin film was developed for UV absorbing and visible-blind photovoltaic.

24 citations


Journal ArticleDOI
TL;DR: The results demonstrated that the photocatalytic and antimicrobial efficacy of the ZnO/TiO ₂ heterojunction was found to vary depending on the morphology of the TiO₂ layer, which could be ascribed to the photogenerated charge carrier efficiency and hierarchical nanostructure with a large surface area.
Abstract: Forming heterostructures based on hybrid photocatalysts has been considered as one of the most effective techniques for improving the photocatalytic efficacy of semiconductor photocatalysts. To address this issue, this article describes ZnO/TiO₂ heterojunction thin films that were produced via the direct current reaction magnetron sputtering technique and with varying thickness of TiO₂ coating. The structural, morphological, and optical features were thoroughly characterized by X-ray diffraction, scanning electron microscope, photoluminescence, and ultra-violet-visible transmission spectra. The photocatalytic and antibacterial ability were assessed by the photo-degradation of methyl orange (MO) aqueous solution and count method of E. coli bacteria. The results demonstrated that the photocatalytic and antimicrobial efficacy of the ZnO/TiO₂ heterojunction was found to vary depending on the morphology of the TiO₂ layer. In addition, their photocatalytic (91% MO degradation within 150 min) and antimicrobial efficacy (92.7% antibacterial efficiency within 90 min) were higher than the efficiency of either material alone. This could can be ascribed to the photogenerated charge carrier efficiency and hierarchical nanostructure with a large surface area. The mechanism for the improved photocatalytic performance has been discussed in detail.

21 citations


Journal ArticleDOI
TL;DR: In this paper, the authors reported the deposition of Cd1-x-yZnxCuySe (0.15) films by facile, industry-oriented chemical synthesis.

14 citations


Journal ArticleDOI
TL;DR: In this article, the authors reviewed leakage current effect based on local area conditions and different techniques used to measure leakage current in lab and at field, special focus on online leakage current monitoring.
Abstract: High voltage outdoor insulator plays a pivotal role in safety and reliability of power transmission system.Contamination severely influences the performance of outdoor insulator. To asses contamination severity on insulator surface and to predict flashovers, leakage current monitoring is required. The amount of leakage current flowing on the surface of insulator indicates insulation safety. Increase in leakage current generates high voltage peaks at insulator dead ends. The voltage may be as high as 1000–5000 volts, mainly depends on certain weather conditions, results in enormous amount of power losses and threat to public safety. The insulator performance depends on amount and type of pollution and wetting mechanism. Leakage current is important tool to investigate insulator electrical surface activity. The scope of this paper is to review leakage current effect based on local area conditions. Leakage current importance for insulators and different techniques used to measure leakage current in lab and at field, special focus on online leakage current monitoring.

13 citations


Journal ArticleDOI
TL;DR: In this paper, the rear emitter silicon heterojunction solar cells of a p-type on the rear side have garnered increasing attention for various reasons, such as the optical properties of the front side's transparent conductive oxide (TCO) layer can be emphasized owing to a lateral transport on the cells, and majority of the carriers are affirmed through a Si substrate.
Abstract: This inclusive study provides detailed information regarding the evolution of rear emitter silicon heterojunction solar cells. Silicon heterojunction (SHJ) solar cells of a p-type on the rear side have garnered increasing attention for various reasons. First, owing to a limitation of the p-type hydrogenated amorphous silicon layer, further optimization relative to an n-type cannot be achieved, and an accumulation of electrons at the front side allows utilizing an n-type wafer to affirm a lateral current transport. Second, better thin n-type nanocrystalline silicon (oxide) contact layers compared to p-type wafers are grown, and allow greater freedom in the structural design. The optical properties of the front side’s transparent conductive oxide (TCO) layer can be emphasized owing to a lateral transport on the cells, and majority of the carriers are affirmed through a Si substrate. In the instance of a rear emitter, the TCO layer is in relief to an adjustment inhibiting the contact resistance between TCO/a-Si:H(p). The fabrication was done in such a manner of SHJ rear emitter solar cells that they achieve greater optimization and overall efficiency of 23.46%.

12 citations


Journal ArticleDOI
TL;DR: In this paper, the polysilicon (poly-Si) layer was applied on an ultrathin SiO2 tunnel oxide layer to achieve high carrier lifetime and low recombination.

11 citations


Journal ArticleDOI
TL;DR: In this article, the surface modification for light trapping based on the Si solar cell application is reported, where front-side texturing and rear-side polishing are used to reduce the thickness of the Si wafer.
Abstract: Reducing crystalline silicon (c-Si) wafer thickness is an effective method to reduce the fabrication cost as it constitutes a major portion of the photovoltaic module cost. However, the open-circuit voltage and fill factor depend on the wafer thickness; further, the short-circuit current density (JSC), affects the device performance negatively. Therefore, light trapping is vital for increasing the JSC of Si solar cells. Consequently, it is essential for improving the conversion efficiency of the solar cell and reduce its production cost by decreasing the wafer thickness. It can be assumed that the thickness of the Si wafer will gradually achieve a minimum value of ~ 100 μm in the future. Therefore, reducing the as-cut wafer thickness will result in a more efficient use of Si. This paper reports the surface modification for light trapping based on the Si solar cell application. Additionally, we introduce methods for surface modification, such as front-side texturing and rear-side polishing.

11 citations


Journal ArticleDOI
02 Apr 2020-Energies
TL;DR: In this paper, a wide band gap material, such as lithium fluoride (LiFx), was used as an emitter that also helped to achieve outstanding efficiency with silicon heterojunction (SHJ) solar cells.
Abstract: In this work, to ameliorate the quantum efficiency (QE), we made a valuable development by using wide band gap material, such as lithium fluoride (LiFx), as an emitter that also helped us to achieve outstanding efficiency with silicon heterojunction (SHJ) solar cells. Lithium fluoride holds a capacity to achieve significant power conversion efficiency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET to assess the restriction of numerous parameters which also provided an appropriate way to determine the role of diverse parameters in silicon solar cells. We manifested and preferred lithium fluoride as an interfacial layer to diminish the series resistance as well as shunt leakage and it was also beneficial for the optical properties of a cell. Due to the wide band gap and better surface passivation, the LiFx encouraged us to utilize it as the interfacial as well as the emitter layer. In addition, we used the built-in electric and band offset to explore the consequence of work function in the LiFx as a carrier selective contact layer. We were able to achieve a maximum power conversion efficiency (PEC) of 23.74%, fill factor (FF) of 82.12%, Jsc of 38.73 mA cm−2, and Voc of 741 mV by optimizing the work function and thickness of LiFx layer.

10 citations


Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate the synthesis of Co1-xNixS (0,≤※x nixS) thin films via a simple, inexpensive solution growth process and its subsequent studies aiming towards supercapacitive application.

Journal ArticleDOI
TL;DR: In this paper, the effect of plasma treatment on an indium tin oxide (ITO) film under an ambient Ar atmosphere was investigated, and the results showed that the thinner ITO grain size decreased to 21.81

Journal ArticleDOI
TL;DR: In this paper, a 3-6 dividing front electrode structure was designed for a shingled module, and the power loss was calculated based on the number of cell divisions and number of fingers.

Journal ArticleDOI
TL;DR: In this article, the authors highlight investigation of various failures of suspension type porcelain insulators, influencing factors responsible for degradation in lifetime and deterioration of suspension types of insulators.
Abstract: Reliability of a power system is generally designated as a measure of the ability of the system to provide customers with adequate and constant supply. Power system failure have adverse effects and become a great concern for important large scale industries in South Korea such as semiconductors, steel and chemicals which require a high quality, stable power supply. In South Korea, nearly 80% of transmission system failures are caused by either natural eventualities such as lightning strikes or failure of insulators. Ageing assets pose significant challenges for utilities. Moisture with high temperature, fluctuation in temperature, contamination and electric stress accelerates aging in suspension insulators. The primary goal for the utility is to utilize the full life of an asset, but ageing increases the probability of deterioration and failure of equipment. The average age of vital assets, is estimated to be more than 35 years. In South Korea near about 1,223,538 porcelain insulators are reported to be in functional state. Among them only 65.19% of insulators are reported to be in operative state over 35 years. Insulators demand only 5–8% of installation costs. However, it demands more than 50% of maintenance costs. Thus, deterioration of insulator enhances capital expenditure and decrease returns on the asset base. Therefore, insulators should possess excellent electrical aging resistance to prevent deterioration of insulators. Korea Electric Power Corporation (KEPCO), largest power generation and distribution utility in South Korea utilize porcelain for almost all suspension insulators employed in transmission lines. Porcelain insulators are usually employed in transmission system as they are cost-effective and possess near about 30 to 60 years of lifespan. Lifetime evaluation of porcelain insulators in overhead transmission line is absolutely challenging, owing to aging process. This work highlights investigation of various failures of suspension type porcelain insulators, influencing factors responsible for degradation in lifetime and deterioration of suspension type insulators, various laboratory test methods available for evaluation of insulators employed in overhead transmission lines.


Journal ArticleDOI
TL;DR: In this article, the role of tunneling oxide quality in the passivation and inter-diffusion properties of the plasma-enhanced chemical vapor deposition of phosphorus-doped amorphous silicon as an electron selective contact layer is studied for carrier selective contact solar cells.

Journal ArticleDOI
TL;DR: In this paper, the effect of microstructure on mechanical properties and aging characteristics based on the alumina content of porcelain was analyzed via X-ray diffraction, and the change in corundum content was quantitatively analyzed via scanning electron microscopy and an image-analysis program.
Abstract: High-efficiency power transmission of is gaining importance in modern society. Studies based on the improvement of quality and performance of materials that are used for fabricating high-voltage insulators are being actively conducted. The porcelain insulator has been used in power-transmission facilities for decades because of its excellent insulation and mechanical properties. It is also attracting attention as a potential next-generation high-voltage component because it is made of environment-friendly material. However, the mechanical strength and aging characteristics of ceramic material, because of its composition and microstructure, differ from those of the porcelain material; this makes it difficult to safely manage the product over a prolonged period in the industrial field. Therefore, in this study, field aged insulators are tested to analyze the effect of microstructure on mechanical properties and aging characteristics based on the alumina content of porcelain. The phase is analyzed via X-ray diffraction, and the change in corundum content is quantitatively analyzed via scanning electron microscopy and an image-analysis program. Vickers hardness test and tensile test are performed to evaluate the mechanical properties of the porcelain insulator based on the corundum content, and the failure probability is predicted by Weibull analysis of the tensile load. Finally, the tensile load equation is derived based on the corundum content and aging, and a verification test is conducted to confirm that mechanical strength and aging resistance increase as the corundum content increases.


Journal ArticleDOI
TL;DR: In this article, the authors investigated indium tin oxide (ITO) as a front surface field (FSF) layer in a rear emitter SHJ solar cell, and they used numerical simulation starting from an experimentally obtained real solar cell.

Journal ArticleDOI
01 Mar 2020-Optik
TL;DR: In this article, an n-type hydrogenated microcrystalline silicon oxide (μc-SiO:H) layer with high conductivity and beneficial optical properties for its application in SHJ solar cells was demonstrated.

Journal ArticleDOI
TL;DR: In this article, the authors investigate the contact characteristics of Al and Ni S/D electrodes using the transmission line method and find that their diffusion coefficient and activation energy are 2.8 and 10−8 cm2/s and 0.45 eV, respectively.

Journal ArticleDOI
TL;DR: In this article, the fundamental carrier transport mechanisms in WOx/c-Si heterojunction solar cells and their effects on the device characteristics are investigated, and the results indicate that the trap-assisted tunneling (TAT) process is the dominant carrier transport mechanism in the forward-bias voltage regime, while the generation of current in the space-charge region is dominant in the reverse-biased voltage regime.

Journal ArticleDOI
TL;DR: In this paper, a 120 ± 4 nm-thin CaF2 film on glass shows an average increase of ~4% in transmittance and a decrease of ~3.2% in reflectance when compared to that of uncoated glass (Un CG), within the wavelength spectrum of approximately 350 to 1100 nm.
Abstract: Calcium fluoride (CaF2) is deposited via vacuum thermal evaporation on borosilicate glass to produce an anti-reflection coating for use in solar modules. Macleod’s essential simulation is used to optimize the thickness of the CaF2 coating on the glass. Experimentally, a 120 ± 4 nm-thin CaF2 film on glass shows an average increase of ~4% in transmittance and a decrease of ~3.2% in reflectance, respectively, when compared to that of uncoated glass (Un CG), within the wavelength spectrum of approximately 350 to 1100 nm. The electrical PV performance of CaF2-coated glass (CaF2-CG) was analyzed for conventional and lightweight photovoltaic module applications. An improvement in the short-circuit current (Jsc) from 38.13 to 39.07 mA/cm2 and an increase of 2.40% in the efficiency (η) was obtained when CaF2-CG glass was used instead of Un CG in a conventional module. Furthermore, Jsc enhancement from 35.63 to 36.44 mA/cm2 and η improvement of 2.32% was observed when a very thin CaF2-CG was placed between the polymethyl methacrylate (PMMA) and solar cell in a lightweight module.

Journal ArticleDOI
TL;DR: In this article, the authors proposed a simply integrated hydrogenated amorphous silicon germanium (a-SiGe:H)/silicon heterojunction (SHJ) tandem configuration as an integrated photovoltaic-electrolysis device.

Journal ArticleDOI
TL;DR: In this article, a simulation was performed to analyze the effect of x on short-circuit current (Jsc) loss, attributed to the hole-selective contact in the device.
Abstract: The stoichiometry value x of WOx , or its oxidation state, is crucial for improving performances of the hole-selective contact heterojunction silicon solar cell. However, it is challenging to tune the films' oxidation state using the well-known evaporation method. In this study, a simulation was performed to analyze the effect of x on short-circuit current (Jsc) loss, attributed to the hole-selective contact in the device. Compared to the thickness of WOx layer, x has a more important role in minimizing Jsc loss. Based on the simulation, the WOx /c-Si heterojunction solar cells having hole-selective WOx contacts with tuned x to vary its oxidation state were fabricated using reactive magnetron sputtering. The relationships of the open-circuit voltage (Voc) and Jsc with respect to x were similar. The experimentally determined Jsc increased from 34.7 to 36.6 mA cm−2 when x was increased from 2.72 to 2.77; this result is consistent with the simulation. Nevertheless, fill factor (FF) reduced with the increase of x, owing to the reduced conductivity of WOx . Both oxidation state and film conductivity must be as high as possible to simultaneously achieve high Voc, Jsc, and FF. The lowest x yielded a solar cell efficiency of 13.3%.

Journal ArticleDOI
12 Jun 2020-Energies
TL;DR: In this article, the relationship between coordination complexes and electrical properties according to the bonding structure of boron and silicon was analyzed to optimize the p-n junction quality for high-efficiency n-type crystalline solar cells.
Abstract: In this paper, the relationship between coordination complexes and electrical properties according to the bonding structure of boron and silicon was analyzed to optimize the p–n junction quality for high-efficiency n-type crystalline solar cells. The p+ emitter layer was formed using boron tribromide (BBr3). The etch-back process was carried out with HF-HNO3-CH3COOH solution to vary the sheet resistance (Rsheet). The correlation between boron–silicon bonding in coordination complexes and electrical properties according to the Rsheet was analyzed. Changes in the boron coordination complex and boron–oxygen (B–O) bonding in the p+ diffused layer were measured through X-ray photoelectron spectroscopy (XPS). The correlation between electrical properties, such as minority carrier lifetime (τeff), implied open-circuit voltage (iVoc) and saturation current density (J0), according to the change in element bonding, was analyzed. For the interstitial defect, the boron ratio was over 1.8 and the iVoc exceeded 660 mV. Additional gains of 670 and 680 mV were obtained for the passivation layer AlOx/SiNx stack and SiO2/SiNx stack, respectively. The blue response of the optimized p+ was analyzed through spectral response measurements. The optimized solar cell parameters were incorporated into the TCAD tool, and the loss analysis was studied by varying the key parameters to improve the conversion efficiency over 23%.

Journal ArticleDOI
TL;DR: In this paper, a mixed phase was identified via Raman spectra and cross-sectional transmission electron microscopy images from amongst the varying phases of GaAs surface passivation, where small crystalline grains were embedded in an amorphous matrix.


Journal ArticleDOI
30 Jun 2020-Energies
TL;DR: In this paper, the authors analyzed the crystallization of a-Si:H via excimer laser annealing (ELA) and compared this process with conventional thermal annoaling.
Abstract: The crystallization of hydrogenated amorphous silicon (a-Si:H) is essential for improving solar cell efficiency. In this study, we analyzed the crystallization of a-Si:H via excimer laser annealing (ELA) and compared this process with conventional thermal annealing. ELA prevents thermal damage to the substrate while maintaining the melting point temperature. Here, we used xenon monochloride (XeCl), krypton fluoride (KrF), and deep ultra-violet (UV) lasers with wavelengths of 308, 248, and 266 nm, respectively. Laser energy densities and shot counts were varied during ELA for a-Si:H films between 20 and 80 nm thick. All the samples were subjected to forming gas annealing to eliminate the dangling bonds in the film. The ELA samples were compared with samples subjected to thermal annealing performed at 850–950 °C for a-Si:H films of the same thickness. The crystallinity obtained via deep UV laser annealing was similar to that obtained using conventional thermal annealing. The optimal passivation property was achieved when crystallizing a 20 nm thick a-Si:H layer using the XeCl excimer laser at an energy density of 430 mJ/cm2. Thus, deep UV laser annealing exhibits potential for the crystallization of a-Si:H films for TOPCon cell fabrication, as compared to conventional thermal annealing.

Journal ArticleDOI
25 Sep 2020
TL;DR: In this paper, the authors provided valuable insight into CTM loss when cells are interconnected by shingled technology to form modules, which can further improve the energy yield capacity and reduce electrical power loss compared to the conventional module interconnection technology.
Abstract: Shingled technology is the latest cell interconnection technology developed in the photovoltaic (PV) industry due to its reduced resistance loss, low-cost, and innovative electrically conductive adhesive (ECA). There are several advantages associated with shingled technology to develop cell to module (CTM) such as the module area enlargement, low processing temperature, and interconnection; these advantages further improves the energy yield capacity. This review paper provides valuable insight into CTM loss when cells are interconnected by shingled technology to form modules. The fill factor (FF) had improved, further reducing electrical power loss compared to the conventional module interconnection technology. The commercial PV module technology was mainly focused on different performance parameters; the module maximum power point (Pmpp), and module efficiency. The module was then subjected to anti-reflection (AR) coating and encapsulant material to absorb infrared (IR) and ultraviolet (UV) light, which can increase the overall efficiency of the shingled module by up to 24.4%. Module fabrication by shingled interconnection technology uses EGaIn paste; this enables further increases in output power under standard test conditions. Previous research has demonstrated that a total module output power of approximately 400 Wp may be achieved using shingled technology and CTM loss may be reduced to 0.03%, alongside the low cost of fabrication.