K
K. D. Shcherbatchev
Researcher at National University of Science and Technology
Publications - 6
Citations - 116
K. D. Shcherbatchev is an academic researcher from National University of Science and Technology. The author has contributed to research in topics: Molecular beam epitaxy & Electron mobility. The author has an hindex of 4, co-authored 6 publications receiving 103 citations.
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Journal ArticleDOI
Fermi level pinning in heavily neutron-irradiated GaN
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,N. G. Kolin,D. I. Merkurisov,V. M. Boiko,K. D. Shcherbatchev,V. T. Bublik,M. I. Voronova,In Hwan Lee,Cheul Ro Lee,Stephen J. Pearton,A. Dabirian,Andrei Osinsky +14 more
TL;DR: In this article, the Fermi level was shown to be pinned in a narrow interval of Ec−(0.8−0.95) eV, irrespective of the starting sample properties.
Journal ArticleDOI
Neutron irradiation effects in p‐GaN
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,N. G. Kolin,D. I. Merkurisov,V. M. Boiko,K. D. Shcherbatchev,V. T. Bublik,M. I. Voronova,Stephen J. Pearton,Amir M. Dabiran,Andrei Osinsky +12 more
TL;DR: In this paper, the authors compared the electrical properties, admittance, and microcathodoluminescence spectra of GaN samples grown by hydride vapor phase epitaxy and by molecular beam epitaxy (MBE) materials.
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Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching
Lee Woon Jang,Dae-Woo Jeon,Alexander Y. Polyakov,A. V. Govorkov,V. N. Sokolov,N. B. Smirnov,Han Su Cho,Jin Hyeon Yun,K. D. Shcherbatchev,Jong Hyeob Baek,In Hwan Lee +10 more
TL;DR: In this article, the structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE-PECE treatment.
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Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,T. G. Yugova,E. A. Petrova,Amir M. Dabiran,Andrew M. Wowchak,Andrei Osinsky,Peter Chow,Stephen J. Pearton,K. D. Shcherbatchev,V. T. Bublik +12 more
TL;DR: In this article, semi-insulating GaN(Fe) films grown by molecular beam epitaxy (MBE) were characterized by measuring electrical properties, deep-level spectra, Fe distribution profiles, microcathodoluminescence (MCL), electron-beam-induced current, and MCL imaging.
Journal ArticleDOI
Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,K. D. Shcherbatchev,V. T. Bublik,M. I. Voronova,Amir M. Dabiran,Andrei Osinsky,Stephen J. Pearton +8 more
TL;DR: In this article, electrical photoelectrical and microcathodoluminescence properties were measured on doped p-GaN superlattices prepared by molecular beam epitaxy on c-plane sapphire substrates.