K
Kamaljit Rangra
Researcher at Indian Institute of Technology, Jodhpur
Publications - 84
Citations - 635
Kamaljit Rangra is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Insertion loss & Capacitive sensing. The author has an hindex of 11, co-authored 80 publications receiving 511 citations. Previous affiliations of Kamaljit Rangra include University of Trento & The National Academy of Sciences, India.
Papers
More filters
Journal ArticleDOI
Sensitivity and reliability enhancement of a MEMS based wind speed sensor
TL;DR: In this paper, shape modification of microcantilever to enhance the sensitivity and reliability of a MEMS-based wind speed sensor is described, and the experimental results have been compared to evaluate the performance of the fabricated sensor.
Proceedings ArticleDOI
Silicon micromachined K-band filters
TL;DR: In this paper, a substrate integrated waveguide (SIW) based filter at K band frequency on silicon substrate is described, where TMAH etching is used to form the via-holes for SIW cavities.
Journal ArticleDOI
FEM modeling of solidly mounted film bulk acoustic resonator and gas sensor using PIB-sensitive layer
Raju Patel,Raju Patel,Manishkumar Patel,Manishkumar Patel,Dharmendar Boolchandani,Kamaljit Rangra +5 more
TL;DR: In this article, a film bulk acoustic resonator (FBAR) was used as a gas sensor for DCM sensing, which has a high quality factor of 1209 at the resonance and shows a coupling coefficient of 7.51% for the 0.7-μm-thick PZE layer.
Journal ArticleDOI
Fabrication of electro-thermally driven tunable plate with Au/SiO2 bimorph beams
Ashudeep Minhas,Amit Kumar,Deepak Bansal,Khushbu Mehta,Anuroop Bajpai,Pramod Kumar,Kamaljit Rangra +6 more
TL;DR: In this paper, the authors presented the design and fabrication of MEMS based electro-thermally actuated square membrane/plate with gold and silicon dioxide bimorph beams.
Experimental study on sheet resistivity and thickness measurement in Copper Electroplating
Abstract: Electroplated copper thin films have been extensively used for interconnections in semiconductor devices. In this paper, electroplating of copper has been investigated to study the dependency of plated film thickness, current efficiency and sheet resistivity on current density. Copper film is electroplated on gold seed layer for via filling using different current densities varying from 10mA/cm to 70mA/cm at constant temperature (40°C). Annealing analysis for plated thick film is done at 200°C for 30 minutes. Surface roughness reduces along with resistivity with annealing.