K
Kang-Lung Wang
Researcher at University of California, Los Angeles
Publications - 14
Citations - 291
Kang-Lung Wang is an academic researcher from University of California, Los Angeles. The author has contributed to research in topics: Transistor & Non-volatile memory. The author has an hindex of 8, co-authored 14 publications receiving 245 citations.
Papers
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Proceedings ArticleDOI
4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic
Yongpan Liu,Zhibo Wang,Albert Lee,Fang Su,Chieh-Pu Lo,Zhe Yuan,Chien-Chen Lin,Qi Wei,Yu Wang,Ya-Chin King,Chrong Jung Lin,Pedram Khalili,Kang-Lung Wang,Meng-Fan Chang,Huazhong Yang +14 more
TL;DR: A 65nm fully-CMOS-logic-compatible ReRAM-based NVP achieving time/space-adaptive data retention and adaptive retention and SWT strategy relieve the ReRAM write endurance challenge, making it sufficient for most applications.
Proceedings ArticleDOI
Normal incident SiGe/Si multiple quantum well infrared detector
TL;DR: In this article, a longwavelength (approximately 10- mu m) quantum-well (QW) infrared detector with normal incident detection was fabricated using p-type Si/sub 1-x/Ge/sub x//Si multiple QWs.
Journal ArticleDOI
A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors
Albert Lee,Chieh-Pu Lo,Chien-Chen Lin,Wei-Hao Chen,K. C. Hsu,Zhibo Wang,Fang Su,Zhe Yuan,Qi Wei,Ya-Chin King,Chrong Jung Lin,Hochul Lee,Pedram Khalili Amiri,Kang-Lung Wang,Yu Wang,Huazhong Yang,Yongpan Liu,Meng-Fan Chang +17 more
TL;DR: The resistive RAM (ReRAM)-based nvFF with self-write termination (SWT) and reduced loading on power rail is proposed to achieve reliable and 26+ times faster restore operation compared with previous nVFFs.
Proceedings ArticleDOI
Field-Free Switching of Perpendicular Magnetization through Voltage-Gated Spin-Orbit Torque
Shouzhong Peng,Jiaqi Lu,Weixiang Li,Lezhi Wang,Hao Zhang,Xiang Li,Kang-Lung Wang,Weisheng Zhao +7 more
TL;DR: In this article, the authors demonstrate the field-free and ultra-low-power switching of perpendicular magnetization by combination of spin-orbit torque (SOT), exchange bias (EB) and voltage-controlled magnetic anisotropy (VCMA) effect.
Proceedings ArticleDOI
TSV-free FinFET-based Monolithic 3D + -IC with computing-in-memory SRAM cell for intelligent IoT devices
Fu-Kuo Hsueh,Hsiao-Yun Chiu,Chang-Hong Shen,Jia-Min Shieh,Ying-Tsan Tang,Chih-Chao Yang,Hsiu-Chih Chen,Wen-Hsien Huang,Bo-Yuan Chen,Kun-Ming Chen,Guo-Wei Huang,Wei-Hao Chen,K. C. Hsu,Srivatsa Srinivasa,Nicholas Jao,Albert Lee,Hochul Lee,Vijaykrishnan Narayanan,Kang-Lung Wang,Meng-Fan Chang,Wen-Kuan Yeh +20 more
TL;DR: In this article, the authors presented the first monolithic 3D vertical cross-tier computing-in-memory (CIM) SRAM cell fabricated using low cost TSV-free FinFET-based 3D+-IC technology.