Srivatsa Srinivasa

TL;DR: Recent progress in the selection and optimization of semiconductor materials for BEOL compatible transistors to enable sequential M3D integration for a range of applications is discussed.

TL;DR: In this paper, the impact of body effect on an NCFET-based bootstrapped switch and illustrate that the linearity of the switch can be improved due to internal amplification of the employed negative capacitance FET.

TL;DR: This paper examines two approaches, frequency scaling and resource scaling, and develops a predictor-driven scheme for dynamically allocating future power budgets between the two techniques, and shows that the combined technique outperforms either technique in isolation.

TL;DR: This paper presents a Look-Up Table (LUT) based Processing-In-Memory (PIM) technique with the potential for running Neural Network inference tasks and implements a bitline computing free technique to avoid frequent bitline accesses to the cache sub-arrays and thereby considerably reducing the memory access energy overhead.

TL;DR: In this article, the authors presented the first monolithic 3D vertical cross-tier computing-in-memory (CIM) SRAM cell fabricated using low cost TSV-free FinFET-based 3D+-IC technology.