Karthik Balasundaram

TL;DR: The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector and distributed feedback semiconductor lasers, where the surface grating is currently fabricated by dry etching.

TL;DR: It is found that the porosity decreases from top to bottom along the axial direction and increases with etching time, and with a MacEtch solution that has a high [HF]:[H(2)O(2)] ratio and low temperature, it is possible to form completely solid nanowires with aspect ratios of less than approximately 10:1.

TL;DR: In this article, the authors demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method.

TL;DR: In this paper, the use of magnetic field-guided MacEtch (h-MacEtch) was used to fabricate periodic nanohole arrays in silicon-on-insulator (SOI) wafers for high reflectance photonic crystal membrane reflectors.

TL;DR: The results contradict the notion that phonon drag is negligible in degenerate semiconductors at temperatures relevant for thermoelectric energy conversion and recommend a revised theory of electron-phonon momentum exchange that accounts for a phonon mean free path spectrum.