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Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires

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TLDR
It is found that the porosity decreases from top to bottom along the axial direction and increases with etching time, and with a MacEtch solution that has a high [HF]:[H(2)O(2)] ratio and low temperature, it is possible to form completely solid nanowires with aspect ratios of less than approximately 10:1.
Abstract
We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in producing solid nanowires using MacEtch as the doping level increases in both p- and n-type Si. We report a systematic reduction in the porosity of these nanowires by adjusting the etching solution composition and temperature. We found that the porosity decreases from top to bottom along the axial direction and increases with etching time. With a MacEtch solution that has a high [HF]:[H2O2] ratio and low temperature, it is possible to form completely solid nanowires with aspect ratios of less than approximately 10:1. However, further etching to produce longer wires renders the top portion of the nanowires porous. (Some figures may appear in colour only in the online journal)

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Porous One-Dimensional Nanomaterials: Design, Fabrication and Applications in Electrochemical Energy Storage.

TL;DR: This review presents an overview of porous 1D nanostructure research, from the synthesis by bottom-up and top-down approaches with rational and controllable structures, to several important electrochemical energy storage applications including lithium-ion batteries, sodium-ion lithium-sulfur batteries, lithium-oxygen batteries and supercapacitors.
Journal ArticleDOI

Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics

TL;DR: In this paper, the authors highlight the characteristics of metal assisted chemical etching of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal orientation dependence, impurity doping and solution concentration dependent porosity, as well as the applicability of MacEtch to non-Si based semiconductor materials including III-V compound semiconductors.
Journal ArticleDOI

Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes

TL;DR: In this paper, the use of silicon as an anode for Li-ion batteries is reviewed, where factors such as film thickness, doping, alloying, and their response to reversible lithiation processes are summarized and discussed with respect to battery cell performance.
Journal ArticleDOI

Decoupling Diameter and Pitch in Silicon Nanowire Arrays Made by Metal‐Assisted Chemical Etching

TL;DR: In this article, the fabrication of well-separated, narrow, and relatively smooth silicon nanowires with good periodicity is demonstrated, using non-close-packed arrays of nanospheres with precisely controlled diameters, pitch, and roughness.
Journal ArticleDOI

Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature

TL;DR: Experimental results indicate that porous structure can be introduced by the addition of H2O2 and the pore structure could be controlled by adjusting the concentration of H1N2, and a mechanism based on the lateral etching which is catalyzed by Ag particles under the motivation by H2 O2 reduction is proposed to explain the PSiNWs formation.
References
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Journal ArticleDOI

Enhanced thermoelectric performance of rough silicon nanowires

TL;DR: In this article, the authors report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter.
Journal Article

Enhanced Thermoelectric Performance in Rough Silicon Nanowires

TL;DR: Electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20–300 nm in diameter show promise as high-performance, scalable thermoelectric materials.
Journal ArticleDOI

Metal-Assisted Chemical Etching of Silicon: A Review

TL;DR: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching, and introduces templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithographic, and block-copolymer masks.
Journal ArticleDOI

Metal-assisted chemical etching in HF/H2O2 produces porous silicon

TL;DR: In this paper, a simple and effective method is presented for producing light-emitting porous silicon (PSi) using a thin layer of Au, Pt, or Au/Pd is deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2 depending on the type of metal deposited and Si doping type and doping level.
Journal ArticleDOI

Silicon nanowire radial p-n junction solar cells.

TL;DR: A low-temperature wafer-scale etching and thin film deposition method for fabricating silicon n-p core-shell nanowire solar cells and showed efficiencies up to nearly 0.5%, limited primarily by interfacial recombination and high series resistance.
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