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Showing papers by "Kenneth P. Rodbell published in 2013"


Journal ArticleDOI
TL;DR: In this article, contact resistances for contacts with sizes from 25 to 330 nm using e-beam-based nano-TLM devices were measured for Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge0.3 with a chemical BORON-doping density of 2 × 1021/cm3.
Abstract: Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ~1.5 × 10-9 Ω· cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge0.3 with a chemical boron-doping density of 2 × 1021/cm3. This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found.

44 citations


Journal ArticleDOI
TL;DR: In this article, a model to examine the production of protons within an ionization counter from the interaction of incident neutrons on the counter material was developed, and results of high energy proton irradiation on an UltraLo-1800 XIA alpha-particle counter were shown that the active signal discrimination is very effective at rejecting most of the detected events.
Abstract: In an effort to better understand the contribution of terrestrial protons to the counter background, we have developed a model to examine the production of protons, within an ionization counter from the interaction of incident neutrons on the counter material. Results of high energy proton irradiation on an UltraLo-1800 XIA alpha-particle counter are shown which indicate that the active signal discrimination is very effective at rejecting most of the detected events. A Poisson model is described which gives guidance on making appropriate measurement times and acceptance criteria for detectors with a range of backgrounds.

6 citations


Patent
03 May 2013
TL;DR: In this paper, a method for constructing a radiation detector includes fabricating a multilayer structure upon a wafer, the multi-layer structure comprising a plurality of metal layers, a plurality-of sacrificial layers, and a pluralityof insulating layers, forming a cavity within the multilayer structure, filling the cavity with a gas that ionizes in response to nuclear radiation, and sealing the gas within the cavity.
Abstract: A method for a constructing radiation detector includes fabricating a multi-layer structure upon a wafer, the multi-layer structure comprising a plurality of metal layers, a plurality of sacrificial layers, and a plurality of insulating layers, forming a cavity within the multi-layer structure, filling the cavity with a gas that ionizes in response to nuclear radiation, and sealing the gas within the cavity.