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Kwang S. Kim

Researcher at Ulsan National Institute of Science and Technology

Publications -  671
Citations -  71259

Kwang S. Kim is an academic researcher from Ulsan National Institute of Science and Technology. The author has contributed to research in topics: Graphene & Ab initio. The author has an hindex of 97, co-authored 642 publications receiving 62053 citations. Previous affiliations of Kwang S. Kim include Asia Pacific Center for Theoretical Physics & IBM.

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Simultaneous Transfer and Doping of CVD-Grown Graphene by Fluoropolymer for Transparent Conductive Films on Plastic

TL;DR: A new method to simultaneously transfer and dope chemical vapor deposition grown graphene onto a target substrate using a fluoropolymer as both the supporting and doping layer is reported.
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Size control of semimetal bismuth nanoparticles and the UV-visible and IR absorption spectra.

TL;DR: IR spectra show that PVP serves as an effective capping ligand, which prevents the nanoparticles from aggregation, and UV-visible absorption spectra of Bi nanoparticles of different diameters show that the surface plasmon peaks broaden with the increasing molar ratio of PVP to BiCl(3).
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Dissociation chemistry of hydrogen halides in water

TL;DR: The ionic dissociation of HX acids in water clusters up to hexamer is examined using density functional theory and Møller-Plesset second-order perturbation methods and accurate analysis based on the coupled clusters theory with singles and doubles excitations agrees with the MP2 results.
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The nature of a wet electron.

TL;DR: In this paper, a comprehensive ab initio study is performed on the wet electron, an electron interacting with a small cluster of water molecules, in the water hexamer system, and predictions include two previously unknown distinctive geometries which bind the excess electron as internal and external states, photoemission ionization energies in agreement with experiment, identification of generic electrophilic sites involving dangling hydrogen atoms, and the tendency of all hydrogen atoms to be saturated in hydrogen bonding or in interaction with the extra electron.