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Lan Wei

Researcher at University of Waterloo

Publications -  83
Citations -  1701

Lan Wei is an academic researcher from University of Waterloo. The author has contributed to research in topics: Electronic circuit & Neuromorphic engineering. The author has an hindex of 14, co-authored 72 publications receiving 1333 citations. Previous affiliations of Lan Wei include Stanford University & Massachusetts Institute of Technology.

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Proceedings ArticleDOI

DSENT - A Tool Connecting Emerging Photonics with Electronics for Opto-Electronic Networks-on-Chip Modeling

TL;DR: DSENT, a NoC modeling tool for rapid design space exploration of electrical and opto-electrical networks, is presented and the results show the implications of different technology scenarios and the need to reduce laser and thermal tuning power in a photonic network due to their non-data-dependent nature.
Journal ArticleDOI

Carbon Nanotube Robust Digital VLSI

TL;DR: Significant advances in design tools can enable robust and scalable CNFET digital VLSI circuits that overcome the challenges of the C NFET technology while retaining its energy-efficiency benefits.
Journal ArticleDOI

Synaptic devices based neuromorphic computing applications in artificial intelligence

TL;DR: In this article, the authors focus on the discussions of synaptic devices based neuromorphic computing applications in artificial intelligence and discuss future applications in neuromorphic vision, sensor, human machine intelligence, topological and quantum computing.
Journal ArticleDOI

Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

TL;DR: In this paper, a semi-alytical carbon nanotube field effect transistor (CNFET) model based on the virtual-source model is presented, which includes series resistance, parasitic capacitance, and direct source-to-drain tunneling leakage.
Journal ArticleDOI

Virtual-Source-Based Self-Consistent Current and Charge FET Models: From Ballistic to Drift-Diffusion Velocity-Saturation Operation

TL;DR: In this paper, a simple analytical FET channel charge partitioning model valid under ballistic and quasi-ballistic transport conditions is developed, and the resulting terminal charges and capacitances are compared with those assuming ballistic operation.