L
Leslie H. Allen
Researcher at University of Illinois at Urbana–Champaign
Publications - 85
Citations - 5032
Leslie H. Allen is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Thin film & Annealing (metallurgy). The author has an hindex of 33, co-authored 82 publications receiving 4808 citations. Previous affiliations of Leslie H. Allen include Cornell University & National Institute of Standards and Technology.
Papers
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Size-Dependent Melting Properties of Small Tin Particles: Nanocalorimetric Measurements.
TL;DR: The latent heat of fusion for Sn particles formed by evaporation on inert substrate with radii ranging from 5 to 50 nm has been measured directly using a novel scanning nanocalorimeter and a particle-size-dependent reduction of $\ensuremath{\Delta}{H}_{m}$ has been observed.
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Low resistance ohmic contacts on wide band‐gap GaN
TL;DR: In this article, a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n−GaN (∼1017 cm−3) using an Al/Ti bilayer metallisation scheme was reported.
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Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements
Matt Zhang,M. Yu. Efremov,François Schiettekatte,E. A. Olson,A. T. Kwan,S. L. Lai,T. Wisleder,Joseph E Greene,Leslie H. Allen +8 more
TL;DR: In this paper, the melting behavior of 0.1\char21{}10-nm-thick discontinuous indium films formed by evaporation on amorphous silicon nitride is investigated by an ultrasensitive thin-film scanning calorimetry technique.
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Glass transition in ultrathin polymer films: calorimetric study.
TL;DR: The ultrasensitive differential scanning calorimetry is used to observe the glass transition in thin (1-400 nm) spin-cast films of polystyrene, poly (2-vinyl pyridine) and poly (methyl methacrylate) on a platinum surface and it is found that there is no appreciable dependence of theGlass transition temperature over the thickness range from hundreds of nanometers down to 3 nm thick films.
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Reactive ion etching of GaN using BCl3
TL;DR: In this paper, an etch rate of 8.5 A/s was obtained with the BCl3 plasma for a plasma power of 200 W, pressure of 10 mTorr, and flow rate of 40 sccm.