Journal ArticleDOI
Low resistance ohmic contacts on wide band‐gap GaN
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TLDR
In this article, a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n−GaN (∼1017 cm−3) using an Al/Ti bilayer metallisation scheme was reported.Abstract:
We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n‐GaN (∼1017 cm−3) using an Al/Ti bilayer metallization scheme. Four different thin‐film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron‐beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900 °C in a N2 ambient using rapid thermal annealing techniques. The lowest value for the specific contact resistivity of 8×10−6 Ω cm2, was obtained using Ti/Al metallization with anneals of 900 °C for 30 s. X‐ray diffraction and Auger electron spectroscopy depth profile were employed to investigate the metallurgy of contact formation.read more
Citations
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References
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Journal ArticleDOI
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
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High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
TL;DR: In this article, the authors report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n−GaN−Al0.86N heterojunction.
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High-power GaN P-N junction blue-light-emitting diodes
TL;DR: In this paper, high power p-n junction blue-light-emitting diodes (LEDs) were fabricated using GaN films grown with GaN buffer layers.
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Metal semiconductor field effect transistor based on single crystal GaN
TL;DR: In this article, the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN was reported and the GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition.
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Metal contacts to gallium nitride
TL;DR: In this paper, the authors report measurements on the nature of aluminum and gold contacts to GaN and find a direct correlation between barrier height and work function of the metal, consistent with the strong ionic character of GaN.