L
Lorie-Mae Baclea-an
Researcher at Lawrence Berkeley National Laboratory
Publications - 9
Citations - 134
Lorie-Mae Baclea-an is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Extreme ultraviolet lithography & Resist. The author has an hindex of 6, co-authored 9 publications receiving 126 citations.
Papers
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Proceedings ArticleDOI
Critical challenges for EUV resist materials
Patrick P. Naulleau,Christopher N. Anderson,Lorie-Mae Baclea-an,Paul Denham,Simi George,Kenneth A. Goldberg,Gideon Jones,Brittany M. McClinton,Ryan Miyakawa,Seno Rekawa,Nathan Smith +10 more
TL;DR: The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements as discussed by the authors, although several materials have met the resolution requirements, LER and sensitivity remain a challenge.
Proceedings ArticleDOI
The SEMATECH Berkeley MET pushing EUV development beyond 22nm half pitch
Patrick P. Naulleau,Christopher N. Anderson,Lorie-Mae Baclea-an,David Chan,Paul Denham,Simi George,Kenneth A. Goldberg,Brian Hoef,Gideon Jones,Chawon Koh,Bruno La Fontaine,Brittany M. McClinton,Ryan Miyakawa,Warren Montgomery,Seno Rekawa,Tom Wallow +15 more
TL;DR: In this paper, the SEMATECH Berkeley 0.3 numerical aperture (NA) MET has been used to achieve a resolution of 8 nm half-pitch and generalized printing with conventional illumination down to 12 nm half pitch.
Proceedings ArticleDOI
The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond
Patrick P. Naulleau,Christopher N. Anderson,Lorie-Mae Baclea-an,Paul Denham,Simi George,Kenneth A. Goldberg,Michael Goldstein,Brian Hoef,Russ Hudyma,Gideon Jones,Chawon Koh,Bruno La Fontaine,Brittany McClinton,Ryan Miyakawa,Warren Montgomery,John Roller,Thomas Wallow,Stefan Wurm +17 more
TL;DR: In this paper, the authors present an update summarizing the latest resist test and characterization results and consider the effect of system-level contributors to the LER observed from the SEMATECH Berkeley microfield tool.
Journal Article
The SEMATECH Berkeley microfield exposure tool: learning a the 22-nm node and beyond
Patrick P. Naulleau,Christopher L. Anderson,Lorie-Mae Baclea-an,Paul Denham,Simi George,Kenneth A. Goldberg,Michael Goldstein,Brian Hoef,Russ Hudyma,Gideon Jones,Chawon Koh,Bruno La Fontaine,Brittany McClinton,Ryan Miyakawa,Warren Montgomery,John Roller,Tom Wallow,Stefan Wurm +17 more
TL;DR: Naulleau et al. as mentioned in this paper presented an update summarizing the latest EUY resist test and characterization results and considered the effect of system-level contributors to the LER observed from the SEMATECH Berkeley microfield tool.
Journal ArticleDOI
Pushing extreme ultraviolet lithography development beyond 22 nm half pitch
Patrick P. Naulleau,Christopher N. Anderson,Lorie-Mae Baclea-an,Paul Denham,Simi George,Kenneth A. Goldberg,Michael Goldstein,Brian Hoef,Gideon Jones,Chawon Koh,Bruno La Fontaine,Warren Montgomery,Tom Wallow +12 more
TL;DR: In this paper, the authors investigate the possibilities and limitations of using the 0.3 numerical aperture (NA) for sub-22-nm half-pitch development and present a method unique to the centrally obscured MET, allowing mask patterning resolution limitations to be overcome.