Simi George

TL;DR: The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements as discussed by the authors, although several materials have met the resolution requirements, LER and sensitivity remain a challenge.

TL;DR: In this paper, the effects of mask absorber LER and mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle are discussed.

TL;DR: The SEMATECH Berkeley 0.3-NA micro-field exposure tool as mentioned in this paper was used for high-resolution line-space printing with large process latitude at 22-nm half-pitch lines.

TL;DR: In this paper, a programmed roughness substrate was fabricated with a number of areas having different roughness magnitudes and a multilayer coated atomic force microscopy (AFM) surface maps were collected before and after multi-layer deposition at-wavelength reflectance and total integrated scattering measurements.

TL;DR: In this article, the authors investigated the line edge roughness evolutions in EUV resist patterns and found that roughness is correlated from the resist substrate interface to the resist-air interface.