G
Gideon Jones
Researcher at Lawrence Berkeley National Laboratory
Publications - 16
Citations - 339
Gideon Jones is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Extreme ultraviolet lithography & Wavefront. The author has an hindex of 9, co-authored 16 publications receiving 323 citations.
Papers
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Proceedings ArticleDOI
Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic
Patrick P. Naulleau,Kenneth A. Goldberg,Erik H. Anderson,Kevin Bradley,Rene Delano,Paul Denham,Bob Gunion,Bruce Harteneck,Brian Hoef,Hanjing Huang,Keith Jackson,Gideon Jones,Drew Kemp,James Alexander Liddle,Ron Oort,Al Rawlins,Senajith Rekawa,Farhad Salmassi,Ron Tackaberry,C. Chung,Layton C. Hale,D. W. Phillion,Gary E. Sommargren,John S. Taylor +23 more
TL;DR: In this paper, the Sematech Set-2 Micro Exposure Tool (MET) has been used for developmental micro-field printing at the Advanced Light Source (ALS) at Lawrence Berkeley National Laboratory.
Proceedings ArticleDOI
Critical challenges for EUV resist materials
Patrick P. Naulleau,Christopher N. Anderson,Lorie-Mae Baclea-an,Paul Denham,Simi George,Kenneth A. Goldberg,Gideon Jones,Brittany M. McClinton,Ryan Miyakawa,Seno Rekawa,Nathan Smith +10 more
TL;DR: The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements as discussed by the authors, although several materials have met the resolution requirements, LER and sensitivity remain a challenge.
Journal ArticleDOI
22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool
Patrick P. Naulleau,Christopher N. Anderson,Jerrin Chiu,Paul Denham,Simi George,Kenneth A. Goldberg,Michael Goldstein,Brian Hoef,Russ Hudyma,Gideon Jones,Chawon Koh,Bruno La Fontaine,Andy Ma,Warren Montgomery,Dimitra Niakoula,Joo-On Park,Tom Wallow,Stefan Wurm +17 more
TL;DR: The SEMATECH Berkeley 0.3-NA micro-field exposure tool as mentioned in this paper was used for high-resolution line-space printing with large process latitude at 22-nm half-pitch lines.
Proceedings ArticleDOI
The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm
Christopher L. Anderson,Dominic Ashworth,Lorie Mae Baclea-an,Suchit Bhattari,Rikos Chao,Rene Claus,Paul Denham,Ken Goldberg,Andrew Grenville,Gideon Jones,Ryan Miyakawa,Ken Murayama,Hiroki Nakagawa,Senajith Rekawa,Jason K. Stowers,Patrick P. Naulleau +15 more
TL;DR: In this article, the authors measured the sensitivity of two organic chemically amplified EUV resists at 6.7 nm and 13.5 nm, respectively, and found that the reduction of the sensitivity was correlated with a reduction in the mass attenuation coefficients of the elements involved with photoabsorption.
Proceedings ArticleDOI
The SEMATECH Berkeley MET pushing EUV development beyond 22nm half pitch
Patrick P. Naulleau,Christopher N. Anderson,Lorie-Mae Baclea-an,David Chan,Paul Denham,Simi George,Kenneth A. Goldberg,Brian Hoef,Gideon Jones,Chawon Koh,Bruno La Fontaine,Brittany M. McClinton,Ryan Miyakawa,Warren Montgomery,Seno Rekawa,Tom Wallow +15 more
TL;DR: In this paper, the SEMATECH Berkeley 0.3 numerical aperture (NA) MET has been used to achieve a resolution of 8 nm half-pitch and generalized printing with conventional illumination down to 12 nm half pitch.