C
Christopher N. Anderson
Researcher at Lawrence Berkeley National Laboratory
Publications - 20
Citations - 299
Christopher N. Anderson is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Extreme ultraviolet lithography & Resist. The author has an hindex of 9, co-authored 18 publications receiving 275 citations.
Papers
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Proceedings ArticleDOI
Directly patterned inorganic hardmask for EUV lithography
Jason K. Stowers,Alan J. Telecky,Michael Kocsis,Benjamin L. Clark,Douglas A. Keszler,Andrew Grenville,Christopher N. Anderson,Patrick P. Naulleau +7 more
TL;DR: In this article, a metal oxide patternable hardmask was designed for EUV lithography, which is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon).
Proceedings ArticleDOI
Critical challenges for EUV resist materials
Patrick P. Naulleau,Christopher N. Anderson,Lorie-Mae Baclea-an,Paul Denham,Simi George,Kenneth A. Goldberg,Gideon Jones,Brittany M. McClinton,Ryan Miyakawa,Seno Rekawa,Nathan Smith +10 more
TL;DR: The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements as discussed by the authors, although several materials have met the resolution requirements, LER and sensitivity remain a challenge.
Journal ArticleDOI
22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool
Patrick P. Naulleau,Christopher N. Anderson,Jerrin Chiu,Paul Denham,Simi George,Kenneth A. Goldberg,Michael Goldstein,Brian Hoef,Russ Hudyma,Gideon Jones,Chawon Koh,Bruno La Fontaine,Andy Ma,Warren Montgomery,Dimitra Niakoula,Joo-On Park,Tom Wallow,Stefan Wurm +17 more
TL;DR: The SEMATECH Berkeley 0.3-NA micro-field exposure tool as mentioned in this paper was used for high-resolution line-space printing with large process latitude at 22-nm half-pitch lines.
Proceedings ArticleDOI
The SEMATECH Berkeley MET pushing EUV development beyond 22nm half pitch
Patrick P. Naulleau,Christopher N. Anderson,Lorie-Mae Baclea-an,David Chan,Paul Denham,Simi George,Kenneth A. Goldberg,Brian Hoef,Gideon Jones,Chawon Koh,Bruno La Fontaine,Brittany M. McClinton,Ryan Miyakawa,Warren Montgomery,Seno Rekawa,Tom Wallow +15 more
TL;DR: In this paper, the SEMATECH Berkeley 0.3 numerical aperture (NA) MET has been used to achieve a resolution of 8 nm half-pitch and generalized printing with conventional illumination down to 12 nm half pitch.
Proceedings ArticleDOI
Film quantum yields of EUV and ultra-high PAG photoresists
Elsayed Hassanein,Craig Higgins,Patrick P. Naulleau,Richard J. Matyi,Gregg M. Gallatin,Gregory Denbeaux,Alin Antohe,Jim Thackeray,Kathleen Spear,Charles R. Szmanda,Christopher N. Anderson,Dimitra Niakoula,Matt Malloy,Anwar Khurshid,Cecilia Montgomery,Emil Piscani,Andrew C. Rudack,Jeff D. Byers,Andy Ma,Kim Dean,Robert L. Brainard +20 more
TL;DR: In this paper, X-ray reflectometry is used to measure the absorbance and film quantum yields (FQY) of EUV photoresist resistors, which leads to the determination of absorbance.