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Martyn A. McLachlan

Researcher at Imperial College London

Publications -  115
Citations -  4431

Martyn A. McLachlan is an academic researcher from Imperial College London. The author has contributed to research in topics: Perovskite (structure) & Thin film. The author has an hindex of 29, co-authored 111 publications receiving 3484 citations. Previous affiliations of Martyn A. McLachlan include London Centre for Nanotechnology & Tianjin University.

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High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

TL;DR: With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).
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High‐Efficiency, Solution‐Processed, Multilayer Phosphorescent Organic Light‐Emitting Diodes with a Copper Thiocyanate Hole‐Injection/Hole‐Transport Layer

TL;DR: Copper thiocyanate (CuSCN) is introduced as a hole-injection/hole-transport layer (HIL/HTL) for solution-processed organic light-emitting diodes (OLEDs) and OLED devices reported here with CuSCN perform significantly better than equivalent devices fabricated with a PEDOT:PSS HIL/ HTL.
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High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °C

TL;DR: An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm(2) /Vs at temperatures <180 °C.